![NTP30N06L Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | NTP30N06LOS-ND |
Manufacturer Part#: |
NTP30N06L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 30A TO220AB |
More Detail: | N-Channel 60V 30A (Ta) 88.2W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 88.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 46 mOhm @ 15A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTP30N06L is a power MOSFET which is designed, manufactured, and tested with bipolar high voltage technology. It is mainly used in high voltage and high speed switching applications. The main features of this MOSFET are a low on-resistance, a high drain-source breakdown voltage and a fast switching speed.
The NTP30N06L is a 30V single N-channel power MOSFET, designed for high voltage, high speed switching applications. The device is available in an eight-pin PDIP/PowerPAK and an eight-pin SO package. It has an enhanced SOA (Safe Operating Area) which allows it to be used in high power applications. The device also has a very low on-resistance with a drain-source breakdown voltage of 450V. The NTP30N06L is designed for use in the automotive and industrial markets.
The working principle of the NTP30N06L is based on the principles of Field Effect Transistor (FET). It works by controlling the flow of electrons between the source and the drain terminals of the device. The MOSFET has two types of transistor: a field effect transistor (FET) and a metal oxide semiconductor (MOS). The main difference between the two types of transistor is the way the charge carriers are controlled. The FET has three terminals: a gate, a source and a drain. The gate is used to control the flow of charge carriers between the source and drain terminals. The MOSFET has only two terminals; a gate and a drain. The gate controls the flow of charge carriers between the drain and source.
The NTP30N06L is a high voltage device and it requires special precautions must be taken when working with it. The device is operated at high voltage and current and therefore, proper safety protocols must be followed. It is also important to note that the NTP30N06L has a maximum operating temperature of 125°C.
The NTP30N06L provides devices with a fast-switching solution. The device can provide devices with high current carrying capacity and low on-resistance. The device also has a very low gate charge and input capacitance. The NTP30N06L is ideal for use in power switching applications in automotive, industrial and consumer electronics markets.
The NTP30N06L is an efficient and reliable device for powering high voltage, high speed switch applications. The device has a low on-resistance and a high drain-source breakdown voltage. It also has an enhanced SOA which allows it to be used in high power applications. The NTP30N06L is designed for use in automotive and industrial markets. The device is easy to use and provides devices with a reliable and efficient solution for powering high voltage, high speed switch applications.
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