NVB5404NT4G Discrete Semiconductor Products

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The NVB5404NT4G is an enhancement-mode power field-effect transistor manufactured by ON Semiconductor. This device is specifically designed for high-side switch and load switch applications in automotive and industrial products. This device\'s ultra-low RDS(on)-pFET depletion-mode technology provides high current carrying capability and low on-resistance.

The NVB5404NT4G is a single N-channel, enhancement-mode MOSFET with advanced power MOSFET technology. It is designed specifically for automotive and industrial high-side switching and low-side switching. It has an ultra-low power dissipation, low on-resistance, and will allow the circuit to operate at much higher efficiency than traditional power FETs. This device also offers the advantage of low drive-voltage requirements, extremely low EMI characteristics and fast switching speeds due to advanced power MOSFET technology.

The working principle of the NVB5404NT4G is based on a five-terminal structure, which allows the device to be operated by a single voltage. This voltage is applied to the gate and output terminals, while the source and drain terminals are connected to the load. When a current is applied to the gate, the N-channel MOSFET is switched on and conducts current from source to drain. When a voltage is removed from the gate, the device is switched off and the current path from the source to drain is blocked.

The NVB5404NT4G power MOSFET is the perfect choice for high-side and low-side applications. It is well suited for automotive and industrial applications in areas such as overcurrent protection circuits, DC/DC converters, motor drivers, and step-up/step-down circuits.

In addition, the NVB5404NT4G is suitable for use in a wide variety of applications. Because of its low-resistance feature and fast switching speed, it is well suited for battery management, lighting control, data line protection and communication interface applications. The device also has built-in thermal protection to prevent it from overheating.

In summary, the NVB5404NT4G is an advanced, high-performance enhancement-mode powerfield-effect transistor with low-resistance and fast switching features. Its features make it an ideal choice for high-side switch and low-side switch applications in automotive and industrial products. Its five-terminal structure and built-in thermal protection make it suitable for a variety of applications.

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