| Allicdata Part #: | NVB5860NT4G-ND |
| Manufacturer Part#: |
NVB5860NT4G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 169A D2PAK |
| More Detail: | N-Channel 60V 220A (Tc) 283W (Tc) Surface Mount D2... |
| DataSheet: |  NVB5860NT4G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 283W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 10760pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3 mOhm @ 75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 220A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The NVB5860NT4G is a type of MOSFET (metal oxide semiconductor field-effect transistor). This type of transistor is an effective way to control large power applications with low power signals. The NVB5860NT4G is a single MOSFET with an impressive amount of high-power output and its small size allows it to be highly versatile in terms of its application field.
The NVB5860NT4G MOSFET has a drain-source breakdown voltage of 30 volts, which is important for the proper functioning of circuits requiring a high voltage. In addition, the maximum peak current of 16.2A that it can undertake is another impressive feature for a MOSFET of such a small size. Its on-resistance is also relatively low at 0.87 ohms. This enables the NVB5860NT4G to perform optimally under high-power switching applications.
The NVB5860NT4G MOSFET can be used in a variety of applications including power switching, voltage conversion, and current control. Its small size and high drain-source breakdown voltage make it ideal for automotive applications such as motor control. It can also be used in industrial automation such as controlling the speed of motors or for lighting control. In addition, it is suitable for use in battery charging circuits and telecom applications.
The working principle of the NVB5860NT4G is based on the fact that MOSFETs are voltage-controlled devices. When a voltage is applied to the gate of a MOSFET, it causes a change in the drain-source resistance. This change in resistance then creates a current through the drain-source. Thus, the NVB5860NT4G allows current to flow through the drain-source only when a voltage is applied to its gate. This makes it an ideal switch for high-power applications because it can be easily switched on and off by the application of different voltages.
The NVB5860NT4G is a single MOSFET that can be used for a variety of applications due to its impressive amount of power, small size, and low on-resistance. It is suitable for use in automotive, industrial, telecom, and battery charging applications. Its working principle is based on its voltage-controlled nature, which allows it to be easily switched on and off. With its qualities, it is easy to see why the NVB5860NT4G is a popular choice for high-power applications.
The specific data is subject to PDF, and the above content is for reference
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