Allicdata Part #: | NVB5405NT4G-ND |
Manufacturer Part#: |
NVB5405NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 16.5A D2PAK |
More Detail: | N-Channel 40V 16.5A (Ta), 116A (Tc) 3W (Ta), 150W ... |
DataSheet: | NVB5405NT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 32V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 88nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5.8 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16.5A (Ta), 116A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NVB5405NT4G Application Field and Working Principle
The NVB5405NT4G is a tailored 40V enhanced N-channel MOSFET from International Rectifier, with fast switching speeds, low on-resistance and superior Avalanche energy ratings. It is designed for use in a wide range of applications including DC-DC converters, notebook adapters, auxiliary power switches, SMPS, and other low-voltage switching designs.
MOSFETs (or Metal Oxide Semiconductor Field-Effect Transistors) are three-terminal devices with an insulated gate and are almost exclusively used as switches. MOSFETs have a number of advantages over other types of FETs, due to their superior switching capabilities and high-voltage tolerance.
The NVB5405NT4G is a 40 Volt N-Channel enhancement Mode MOSFET. It is designed with a low on-resistance and excellent Avalanche energy ratings, with low gate charge and fast switching speeds, for use in various applications. It is ideally suited to reduce power consumption and minimize EMI in low voltage switching designs.
The NVB5405NT4G contains an integrated Fast Recovery Diode, which prevents reverse current flow and further reduces power consumption. The device is capable of switching up to 40 Volts at a maximum of 6 Amps, and it can be used in applications where the device is subjected to temperature variations of up to 175 degrees Celsius.
The working principle of the NVB5405NT4G is based on the principle of a depletion mode MOSFET. The device presents a P-channel between the Source and Drain terminals when no voltage is applied to the Gate. When a voltage is applied to the Gate, the channel between the Source and Drain opens and allows current flow. When the voltage on the Gate is reduced, the channel closes, preventing further current flow.
The NVB5405NT4G is a versatile device, with a wide range of application fields, such as DC-DC converters and notebook adapters, auxiliary power switches, sensors, switching regulators, SMPS, and other low-voltage switching designs. It is ideal for high-efficiency power conversion and EMI reduction, and it can be used in harsh operating conditions, up to a temperature of 175 degrees Celsius.
The specific data is subject to PDF, and the above content is for reference
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