NVB5860NLT4G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	220A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	220nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	13216pF @ 25V
FET Feature:	--
Power Dissipation (Max):	283W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK-3
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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The NVB5860NLT4G is a type of Field Effect Transistor (FET) that is generally part of a larger, self-contained "system". The system is typically used to control current flow in an electronic circuit by switching on and off a specific set of components. This type of FET is widely used in many fields such as telecommunication, robotics, computer engineering, automotive, aerospace, and more.A FET is an active component and is related to transistors exchange the current flow between two terminals through controlled amounts. A FET works by having two active channels (gate and drain) alternately on and off while the source acts as a charge reservoir. The NVB5860NLT4G has a higher voltage threshold or "gate-source breakdown voltage" rating than other types of FETs. This higher voltage allows greater control of the current passing through the component and can provide greater overall system reliability.The NVB5860NLT4G FET has several key design characteristics that make it desirable in certain applications. One such element is its increased resistance to sub-threshold leakage current. This characteristic helps to reduce the amount of power loss during device operation. The component also offers a "recovery turn-on and turn-off time" of much shorter duration than some other FET types, providing better switching speed and reducing the heat generated in the component.The component’s high-temperature characteristics are also desirable. It has both a high-temperature operating range and a high temperature reverse bias SOA (Safe Operating Area). This allows for more reliable operation and longer component life in environments with extreme temperatures.The NVB5860NLT4G is a high-performance component designed to maximize power saving and energy efficiency. It is typically used in a variety of electronic systems, including automotive, industrial, medical, and telecommunications equipment. In automotive applications, the component helps to improve engine performance and fuel economy. It is also used in medical equipment, communication systems, mobile handsets, and power supply designs. In all of these applications, the component is used to switch power on and off in order to ensure the most efficient use of energy.The NVB5860NLT4G also offers a large number of safety and protection features. These features help to ensure reliable and safe operation of the component in applications where high voltages and currents are involved. The component is also designed to provide adequate protection against overloading, fault conditions, and partial discharge events.In summary, the NVB5860NLT4G is a high-performance FET that is used in a variety of applications, including automotive, industrial, medical, and telecommunications equipment. The component has a high voltage threshold rating, excellent power-saving features, and a variety of safety and protection features. It is an ideal choice for systems that require reliable operation at extreme temperatures, high current loadings, and/or require extreme voltage and power-saving performance.

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