Allicdata Part #: | PBHV8115TLHR-ND |
Manufacturer Part#: |
PBHV8115TLHR |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | PBHV8115TLH/SOT23/TO-236AB |
More Detail: | Bipolar (BJT) Transistor NPN 150V 1A 30MHz Surfac... |
DataSheet: | PBHV8115TLHR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.07313 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 60mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 50mA, 10V |
Frequency - Transition: | 30MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB |
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PBHV8115TLHR transistors are high-performance bipolar (BJT) transistors, also known as BJT single transistors, that are designed for a broad range of encryption and digital logic applications. This transistor is designed for use in high-performance, logic-based applications that require high-speed switching and low-power consumption. This transistor is also characterized by its low voltage drop, which helps to conserve battery life in mobile applications.
The transistor includes a silicon substrate that acts as the base material for the three semiconductor layers that make up the device. The first layer, known as the base layer, includes the P-type and N-type semiconductors, as well as the contact metallization layer. The second layer, known as the isolation layer, is used for the connection and isolation of the component. The third layer is the emitter layer, which is the active part of the transistor.
The PBHV8115TLHR transistor is designed with a special feature known as a “gate-drive” that allows it to provide very fast switching speeds. This is achieved by applying a voltage to the base that turns the transistor “on” and “off”, allowing the transistor to quickly switch between two voltage levels. The gate-drive feature also helps to reduce the amount of power required to drive the transistor, making it more efficient than other types of transistors.
In order to understand how the PBHV8115TLHR transistor works, it is important to have a basic understanding of how transistors operate. The transistor is basically a three-terminal device, with the three terminals representing the base, collector, and the emitter. When a voltage is applied to the base terminal, the transistor will switch between two voltage levels. In the “on” position, the base voltage will cause the collector to pass current to the emitter and out of the transistor. In the “off” position, the base voltage will cause the collector to stop current from flowing to the emitter and out of the transistor.
PBHV8115TLHR transistors are used in many different types of applications, including RF, automotive, computers, and communications. It is able to handle high frequencies and is designed to operate with very low power consumption. Additionally, the device can be used in a variety of temperature ranges, making it an ideal component for applications that require high temperatures, such as automotive and military applications. PBHV8115TLHR transistors can also be used in applications that require fast switching speeds, as well as those that require low power consumption, making them a versatile component.
PBHV8115TLHR transistors are an excellent choice for any application that requires high-speed switching, low power consumption, and high reliability. With its low voltage drop, it can help to conserve battery life in mobile applications, while its fast switching speeds make it ideal for use in high-speed digital and RF applications. The PBHV8115TLHR transistor is an excellent component for applications that require high performance, low power consumption, and high reliability.
The specific data is subject to PDF, and the above content is for reference
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