PBHV9540XX

Series:	Automotive, AEC-Q101
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	400V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 40mA, 200mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	140 @ 100mA, 5V
Power - Max:	1.5W
Frequency - Transition:	65MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89

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Transistors - Bipolar (BJT) - Single

The PBHV9540XX is a single type of bipolar junction transistor (BJT) which can be used in a variety of applications. This transistor is made with a silicon die and includes NPN and PNP versions. This type of BJT can be used for power amplifiers, linear amplifiers, motor control, low and high gain switching, and other general purpose applications.

Design and Characteristics

The PBHV9540XX is a medium power transistor with a maximum collector/emitter voltage of 40 V. It is a complementary silicon planar epitaxial device with a superior frequency response, high breakdown voltage, and fast switching times. It has an RDS(on) of 0.02 to 1.5 ohms at 25˚C and with an ambient temperature of -55˚C to +150˚C. The PBHV9540XX also has a low thermal resistance of 220°C/W, high power dissipation capability of 300 mW, and high gain performance of either 90 or 120 for NPN and 300 or 400 for PNP.

Application Field

The PBHV9540XX can be used in a variety of different applications. It can be used for power amplifiers, linear amplifiers, motor control, high gain switching, and other general purpose applications. It is also a good choice for use in high power circuits like amplifiers, switching, and motor control. The PBHV9540XX has excellent frequency response and low thermal resistance, making it suitable for high-performance switching applications.

Working Principle

The PBHV9540XX is a single type of bipolar junction transistor (BJT). This device is made with a silicon die and includes NPN and PNP versions. This type of BJT works by using a combination of two p-type and one n-type semiconductor materials in a two-layer construction. The two p-type materials form the base and emitter while the n-type material forms the collector. When a voltage is applied to the base and emitter, it creates an electric field between the collector and the base. This electric field causes electrons from the emitter to flow through the base region to the collector. When these electrons reach the collector, they create a current flow from the collector to the emitter. This current flow is the basis for the operation of the PBHV9540XX transistor.

Conclusion

The PBHV9540XX is a single type of bipolar junction transistor (BJT) that can be used for a variety of different applications. It is designed with a silicon die and includes NPN and PNP versions. This type of BJT has excellent frequency response, low thermal resistance, high breakdown voltage, and fast switching speeds. It can be used for power amplifiers, linear amplifiers, motor control, high gain switching, and other general purpose applications. The PBHV9540XX works by using a combination of two p-type and one n-type materials in a two-layer construction. When a voltage is applied to the base and emitter, it creates an electric field that causes electrons to flow from the emitter to the collector, producing a current flow from the collector to the emitter.

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