PBHV9115TLHR Allicdata Electronics
Allicdata Part #:

PBHV9115TLHR-ND

Manufacturer Part#:

PBHV9115TLHR

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: PBHV9115TLH/SOT23/TO-236AB
More Detail: Bipolar (BJT) Transistor PNP 150V 1A 55MHz Surfac...
DataSheet: PBHV9115TLHR datasheetPBHV9115TLHR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.07313
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 10V
Frequency - Transition: 55MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Description

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PBHV9115TLHR transistors are a type of single bipolar junction transistors (BJT). The number “9115” in the model number is used to indicate the devices that are made specifically for commercial applications. The “TLHR” indicates that the devices are manufactured and tested in lead-free/halogen-free packages. This type of transistor is widely used in commercial products such as radio, television, and telephone equipment.

A single bipolar junction transistor (BJT) is a three-layer electronic device consisting of an emitter, a base, and a collector. The emitter is made up of an n-type layer and an p-type layer. The base is usually a p-type semiconductor, and the collector is usually an n-type semiconductor. The actual physical structure of the device is composed of a semiconductor material with a thin p-type base sandwiched between an n-type emitter and an n-type collector. This is the most basic structure of a BJT transistor.

The main purpose of a BJT is to control the current flowing through it by varying the voltage applied to the base-emitter junction. When a positive voltage is applied to the base-emitter junction, it causes the electrons in the emitter to move into the base region, resulting in an increase in the current flowing through the device. If the voltage is increased further, the amount of current flow increases. Conversely, when a negative voltage is applied to the base-emitter junction, it causes the electrons in the base to move into the emitter region, resulting in a decrease in the current flow. This effect is known as the transistor action.

PBHV9115TLHR transistors are used in many different applications. They are used in power supplies and for switching high voltage or low voltage circuits. They are also used in oscillators and amplifiers. As the internal structure of a BJT is designed to control the amount of current passing through it, BJTs are widely used as switches. In addition, BJTs are also used as voltage-controlled resistors (VCRs) in many circuits.

PBHV9115TLHR transistors are also used in various analog integrated circuits. Their small size allows them to be placed on a single integrated circuit. This makes them ideal for a variety of applications including digital-to-analog converters (DACs) used for sound or video processing, or for analog-to-digital converters (ADCs) used for data conversion. In addition, they can also be used in linear and logic circuits.

Finally, PBHV9115TLHR transistors are also used as temperature sensors. They are used to detect changes in temperature and then to convert this information into an electrical signal. This electrical signal can then be used to control temperature-sensitive circuits such as heating or cooling units.

In conclusion, PBHV9115TLHR transistors are a type of single bipolar junction transistors (BJT). They are widely used in many different applications such as power supplies, oscillators, amplifiers, switches, voltage-controlled resistors, DACs, ADCs, linear and logic circuits, and as temperature sensors. With their small size, they are very useful for integrated circuits and other electronic devices.

The specific data is subject to PDF, and the above content is for reference

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