Allicdata Part #: | 1727-5683-2-ND |
Manufacturer Part#: |
PBHV9115T,215 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 150V 1A SOT23 |
More Detail: | Bipolar (BJT) Transistor PNP 150V 1A 115MHz 300mW ... |
DataSheet: | PBHV9115T,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10151 |
6000 +: | $ 0.09496 |
15000 +: | $ 0.08841 |
30000 +: | $ 0.08732 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100mA, 500mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 10V |
Power - Max: | 300mW |
Frequency - Transition: | 115MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | PBHV9115 |
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The PBHV9115T,215 transistor is a bipolar junction transistor (BJT), typically classified as a single. Bipolar transistors represent an important class of transistors, due to their superior switching capabilities. The PBHV9115T,215, in particular, is a general-purpose, NPN transistor.
Applications
The PBHV9115T,215 is designed for use in a wide array of applications, owing to its wide range of operational characteristics. Its general purpose NPN design makes it a popular choice for analog signal processing and signal amplification, due to its good current gain characteristics. It is also commonly used as a switch in digital applications. The device can be used in a wide range of power amplifiers and line drivers, allowing for a wide range of control capabilities over signals. It even finds use in radio systems, owing to its good signal, power and current gain characteristics.
Working Principle
Bipolar transistors such as the PBHV9115T,215 are based on the operation of two back-to-back semiconductor p-n junctions. These are connected in such a way that one of the junctions is connected to the emitter, one to the base, and the other to the collector. The operation of the transistor relies on the fact that current can be transferred through the base-emitter diode, with the current being amplified by the collector-base diode. This, in essence, means that the current gain of the transistor is determined by the current flowing through the base-emitter junction.
The PBHV9115T,215 has a collector current of up to 3A, with a voltage between -55V and 300V. The device also has an optimal frequency range of about 300 MHz to 1GHz. The power output is typically 25 watts. The PBHV9115T,215 also has a low saturation voltage, of approximately 150mV, which makes it ideal for low-voltage power applications.
The PBHV9115T,215 is also designed to be low-noise, making it suitable for use in sensitive audio or radio circuits. The device is designed to have a high breakdown voltage, allowing for a wide range of control capabilities over voltage. The device also has an excellent dielectric withstand voltage of up to 175V, allowing it to be used in high-voltage applications.
The PBHV9115T,215 is an electrical device that is well-suited for a wide array of applications, due to its excellent design and operational characteristics. Its low saturation voltage, combined with its high current gain, makes it ideal for use in analog signal processing and amplification, as well as digital switching. Its high power output and high breakdown voltage make it well-suited for use in radio systems and in high-voltage power applications.
The specific data is subject to PDF, and the above content is for reference
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