PBHV9515QAZ

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Transistors - Bipolar (BJT) - Single: PBHV9515QAZ

PBHV9515QAZ is an NPN single transistor manufactured by PHBV Corporation, designed to be a general purpose small signal amplifier. Depending on its applications, it is generally used either as a switch or an amplifier in low voltage, low power circuits. As a switch, it is designed to open or close an electrical circuit, while as an amplifier it increases the power of a signal, making it suitable for various applications such as radio frequency (RF), infrared, and audio electronics.

The PBHV9515QAZ features a maximum power dissipation of 50 milliwatts, a DC current gain of 100-1000, and a reverse leakage current of less than 10 μA. It is manufactured using the SOT-323 package and is moderately easy to assemble.

Applications:

The PBHV9515QAZ has a wide range of applications, from its use in low-power switching to its use as a low power amplifier. In low power switching, it can be used to control electric devices or signals in small circuits, such as those found in consumer electronics. As an amplifier, it can be used to increase the power of signals in radio frequency and infrared circuits, such as those found in remote control units and wireless communication systems. It can also be used as a voice amplifier, increasing the volume of sound in audio systems.

Working Principle:

The PBHV9515QAZ is an NPN transistor, which makes use of the variation in conductivity between the emitter, base, and collector. The emitter of the PBHV9515QAZ consists of two p-type semiconductors layers, each of which is connected to a different terminal. The two p-type layers are separated by an n-type semiconductor layer, which act as an isolator, preventing electrons from passing from one layer to the other.

When the PBHV9515QAZ is on, current flows from the emitter to the collector through the base layer. As the base layer of the transistor is thin and has a highly resistive material, the majority of current flows through the collector. This is known as the ‘forward bias’ of the transistor.

When the base layer is reversed, with the current flowing from the collector to the emitter, the transistor is said to be in the ‘reverse bias’ state. In this state, the transistor blocks most of the current, so that very little current is transferred from the collector to the emitter. This makes the PBHV9515QAZ an excellent choice for low power, low voltage applications, such as those found in consumer electronics.

In summary, the PBHV9515QAZ is a NPN single transistor, designed for low voltage, low power applications, such as consumer electronics and radio frequency electronics. It features a maximum power dissipation of 50 milliwatts, a DC current gain of 100-1000, and a reverse leakage current of less than 10 μA. In addition, due to its low power requirements, it is easy to assemble, making it an ideal component for various electronic projects.

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