Allicdata Part #: | PBHV9540XF-ND |
Manufacturer Part#: |
PBHV9540XF |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | PBHV9540X/SOT89/MPT3 |
More Detail: | Bipolar (BJT) Transistor PNP 400V 500mA 65MHz 1.5W... |
DataSheet: | PBHV9540XF Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.09946 |
Series: | Automotive, AEC-Q101 |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 40mA, 200mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 140 @ 100mA, 5V |
Power - Max: | 1.5W |
Frequency - Transition: | 65MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89 |
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The PBHV9540XF transistor is an NPN Silicon Planar High Voltage transistor specifically designed for high voltage applications. It is commonly used in power supplies, horizontal deflection circuits, switching circuits, voltage regulator circuits, and pulse-width modulation (PWM) circuits. It is also suitable for general-purpose switching and amplification applications in high voltage circuits. The PBHV9540XF transistor has a maximum voltage of 800V, a maximum current of 1.5A, and a high operating temperature range of -55°C to +150°C. It is capable of providing high performance in demanding applications.
The PBHV9540XF transistor is a complimentary pair of NPN and PNP transistors. The NPN transistor is formed by adding a base layer between the emitter and collector layers that provide the controlled current paths. This configuration is technically known as bipolar junction transistors (BJT). The NPN transistor is commonly used as an active load in switching applications.
The working principle of a NPN BJT is based on electrical current flow and the ability to control the flow of the current. A BJT is a three-terminal device that consists of a base, an emitter, and a collector. The base serves as the control terminal and is used to control the amount of current flowing through the transistor. When a small current is applied to the base, the transistor\'s internal resistance increases, thereby reducing the current flowing through the transistor. Conversely, when a higher current is applied to the base, the internal resistance decreases, allowing more current to flow through the transistor.
The collector is the output terminal and the emitter is the input terminal of the transistor. The voltage at the emitter is relatively higher than the voltage at the collector. The voltage applied to the base causes a corresponding amount of current to flow between the emitter and the collector. This flow of current results in changes in the output voltage, which in turn can be used to control various electrical circuits. Furthermore, the shape of the base-emitter voltage curve also determines the device\'s gain, which is the ratio of output current to input current.
The PBHV9540XF is highly suited for switching applications and other high voltage applications where high performance is required. It is designed for dynamic operation and its high power rating, high voltage rating and high operating temperatures make it an ideal choice for many industrial applications. Furthermore, it is available in both through-hole and surface-mount packages, making it suitable for a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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