PBHV8115Z,115 Allicdata Electronics
Allicdata Part #:

1727-5425-2-ND

Manufacturer Part#:

PBHV8115Z,115

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 150V 1A SOT223
More Detail: Bipolar (BJT) Transistor NPN 150V 1A 30MHz 1.4W Su...
DataSheet: PBHV8115Z,115 datasheetPBHV8115Z,115 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.15463
2000 +: $ 0.14098
5000 +: $ 0.13188
10000 +: $ 0.12279
25000 +: $ 0.12128
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Power - Max: 1.4W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: PBHV8115
Description

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The PBHV8115Z,115 transistor is a member of the Bipolar Junction Transistor (BJT) family, classified as a single transistor. It\'s an NPN transistor featuring a maximum of 45V DC current gain and a maximum collector-base voltage of 200V DC. It\'s suited for a wide variety of applications, from amplification and switching to signal conditioning, so it\'s commonly used as an audio driver, power amplifier, and as a small signal amplifier.

It\'s also widely used in switching systems and for controlling power levels. In these applications, the transistor is connected to the moveable contact of a switch, and the semiconductor allows the current to pass through or blocks it, depending on the density of the current flow. To increase its versatility, PBHV8115Z,115 transistors are often used with integrated circuits.

The PBHV8115Z,115 transistor is designed to operate within a certain range of voltages, which is usually between 0.2 to 45V DC. To determine its range of operation, the gain of the transistor is important. This is a measure of how much current passes through the device when it is activated. To calculate the gain, the base voltage is increased while the collector voltage is maintained at zero. The resulting collector current will determine the gain.

The PBHV8115Z,115 transistor works on the principle of minority carrier injection. This type of transistor features a base region that is smaller than the collector and emitter regions. Starting from the collector, the current flow does not pass straight to the emitter, but has to go through the base first. When a small forward voltage is applied to the base region, the electric current gets injected into the base. This injection of electrons into the base creates a multiplicative effect on the current which passes through the base region, since more electrons are injected due to the increased current in the base region.

The multiplicative effect of the increased current in the base region is what allows the PBHV8115Z,115 transistor to amplify currents. Since this type of transistor is most commonly used as an amplifier or a switch, it is ideal for these types of applications. The PBHV8115Z,115 transistor has many advantages that make it ideal for these types of applications. For example, it has a high DC current gain and can handle voltages up to 200V DC. It is also a reliable device and has a long service life.

In conclusion, the PBHV8115Z,115 transistor is an ideal choice for applications such as audio drivers, power amplifiers, and as a small signal amplifier. Its high DC current gain, long service life, and reliability make it a great choice for these types of applications. Its ability to handle high voltages makes it a great choice for power applications, while its minority carrier injection process allows it to amplify currents, making it an ideal choice for amplifiers and switching applications.

The specific data is subject to PDF, and the above content is for reference

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