PBHV9040Z/ZLF

Series:	Automotive, AEC-Q101
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	250mA
Voltage - Collector Emitter Breakdown (Max):	400V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 20mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 50mA, 10V
Power - Max:	1.4W
Frequency - Transition:	55MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SC-73

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Introduction

The PBHV9040Z/ZLF is a Power Bipolar Junction Transistor (BJT) designed for use in a wide range of low to high voltage applications. It utilizes an NPN type single transistor, commonly designated as ‘low voltage – high voltage’, or ‘LV-HV’ for short. It has an advanced high temperature design, low leakage current and high operating frequencies. The device also features a highly reliable and durable construction, high power handling capabilities and low junction capacitance. The PBHV9040Z/ZLF is a high performance device suitable for use in many consumer, industrial and medical applications.

Applications

The PBHV9040Z/ZLF can be used in a variety of demanding applications including motor control, robotics, interfaces, switching, lighting and power supplies. The device provides a low voltage reference for the drive circuit and is designed to reduce power losses from VBE and crossover effects. This makes it ideal for precision motor control, driving various loads such as stepper motors and servomotors.In addition, the PBHV9040Z/ZLF is also suitable for use as a switching and amplification element in audio applications. The low voltage reference allows for the efficient transfer of power and signal across large distances. It can also be utilized in analog and digital interfaces.

Features and Benefits

The PBHV9040Z/ZLF features a number of features and benefits that make it an attractive choice for many applications. With its low leakage current, the device is well suited for use in medical applications where current dissipation is of critical importance. Its high temperature design makes it suitable for use in applications operating at temperatures up to 175°C.Furthermore, the PBHV9040Z/ZLF has a high power handling capacity and is capable of handling power levels up to 40W. It also has a low junction capacitance, making it ideal for use in high speed switching applications.

Working Principle

The PBHV9040Z/ZLF utilizes an NPN type single transistor in its construction. The design makes use of two face to face diodes which form the collector and bas regions of the transistor. The collector and base regions are also guarded to minimize noise, temperature variation and frequency effects.When an input signal is applied to the base region, a base to emitter current is generated, producing a voltage drop across it. This voltage drop creates a current gain in the collector region, allowing more current to flow.The device also boasts low leakage current and is protected against static and additional current, allowing it to operate in harsh environments.

Conclusion

The PBHV9040Z/ZLF is a Power Bipolar Junction Transistor designed for operation in low to high voltage applications. It offers a low voltage reference for the drive circuit and can handle power levels up to 40W. Furthermore, the device has an advanced high temperature design, low leakage current and protection against static and additional current. These features make the PBHV9040Z/ZLF an ideal choice for use in a wide range of applications including motor control, robotics, interfaces, lighting and power supplies.

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