PBSS4021SP,115

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The PBSS4021SP, 115 is a device belonging to the Transistors - Bipolar (BJT) - Arrays family. It is a power Surface Mount transistor array that features four five-lead configurations. This device is designed for applications that require high current, low power dissipation, and high voltage. It also benefits from having enhanced avalanche and dv/dt immunity.

The device is composed of three NPN transistor arrays, incorporating a Darlington collector configuration and equipped with an ESD protection diode. The PNP transistors have a base current of typical 4 µA. The Darlington emitter configuration delivers higher gain than a single device. This increases the bandwidth of the device, providing better overall operating performance. The integrated diodes provide a level of protection against ESD.

The device is designed to operate in high current, low power and high voltage applications. It features a maximum collector-emitter voltage of 80V, a maximum collector current of 2A and a total power dissipation of 115 mW. The device also benefits from a 1.8A maximum rated peak current, making it ideal for applications in the power supply, motor control, and portable device markets.

The device can be used to provide signal amplification and voltage translation. It is often used as a power buffer to provide extra current, and can also be used as a switch or amplifier. As a signal amplifier, the PNP transistors provide gain and an improved signal-to-noise ratio. As a voltage translator, the device can be used to convert signals from one logic family to another.

The operating principles for the device can be understood by examining the NPN transistor. It consists of an emitter, collector, and base. When a voltage is applied to the base, an electric current is allowed to flow from the emitter to the collector. This current, called the collector current, is amplified by the ratio of the collector voltage over the base voltage, called the DC gain. The PNP transistors in the device act oppositely, with current flowing from the collector to the emitter. In the integrated Darlington configuration, the base current of each transistor is amplified by the current multiplication factor provided by the two transistors. The resulting gain of the Darlington emitter configuration is much higher than that of a single transistor.

The PNP transistors are also equipped with an ESD protection diode, providing a high level of protection against electrostatic discharge. The protection diodes divert any electrostatic charge away from the base/collector junction, preventing damage to the device. The protection diodes also provide a path for high-energy current during an ESD event, allowing for a safe discharge of the electrostatic charge.

The PXSS4021SP, 115 is a versatile power Surface Mount transistor array that is able to meet the requirements of moderate to high power, low to medium power dissipation, and low to medium current applications. The integrated Darlington configuration, ESD protection diodes, and enhanced avalanche and dv/dt immunity make it an ideal choice for applications that require high performance and robustness.

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