PBSS2540MB,315 Allicdata Electronics
Allicdata Part #:

1727-1295-2-ND

Manufacturer Part#:

PBSS2540MB,315

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 40V 0.5A 3DFN
More Detail: Bipolar (BJT) Transistor NPN 40V 500mA 450MHz 250m...
DataSheet: PBSS2540MB,315 datasheetPBSS2540MB,315 Datasheet/PDF
Quantity: 10000
10000 +: $ 0.02474
30000 +: $ 0.02328
50000 +: $ 0.02183
100000 +: $ 0.01935
Stock 10000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 50mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Power - Max: 250mW
Frequency - Transition: 450MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: 3-DFN1006B (0.6x1)
Base Part Number: PBSS2540
Description

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PBSS2540MB, 315 Application Field and Working Principle

The PBSS2540MB, 315 is a revolutionary bipolar junction transistor (BJT) designed for switching applications. It is considered to be one of the best-selling switching devices in the world. It is a two-terminal, three-layer design that features superior performance compared to traditional transistors. As a single device, it can be used in a wide range of electrical and electronic applications including analog, digital, and signal switching.

The PBSS2540MB, 315 has three terminals: an emitter, a base, and a collector. This design allows current to flow within the device. The emitter is used to control the passage of current and regulates it. The collector allows the current to flow away from the emitter/base junction. The base is used as a connection point between the emitter and the collector.

The PBSS2540MB, 315 has a unique construction that makes it superior to its predecessors. The two p-type and n-type semiconductor layers sandwich the central layer of the transistor. The two outer layers are the collector and emitter. This design makes the device more tolerant to temperature changes, hence improving its performance.

The PBSS2540MB, 315 can be used in several applications, ranging from automotive and industrial to military and telecommunications. Its superior performance makes it a popular option for motor drivers, instrumentation, digital logic, relay drivers, and other digital and analog switches. Its corrugated wall structure helps it perform better than other switching devices.

The PBSS2540MB, 315 has great temperature stability, making it more suitable for demanding applications. Its operating temperature range is from -40°C to +125°C. The transistor also offers fast switching speeds with a minimum on-voltage of 1.5V and a switching speed of 0.5 ns.

The PBSS2540MB, 315 is available in several different package types, allowing customers to choose the right one for their applications. The transistor can also be found in various surface mount packages. This ensures that the device is compatible with every type of circuit.

As for its working principle, the PBSS2540MB, 315 relies on the flow of electrons and holes. In the two outer layers, electrons flow from the emitter to the collector and holes flow from the collector to the emitter. The base between them holds the transistor in the On or Off state, thus controlling the amount of current flowing from one terminal to the other.

In summary, the PBSS2540MB, 315 is an advanced bipolar junction transistor designed for switching applications. Its superior performance combined with its flexible packaging options and temperature stability makes it the ideal device for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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