PBSS8110S,126 Allicdata Electronics
Allicdata Part #:

PBSS8110S,126-ND

Manufacturer Part#:

PBSS8110S,126

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN 100V 1A TO92
More Detail: Bipolar (BJT) Transistor NPN 100V 1A 100MHz 830mW ...
DataSheet: PBSS8110S,126 datasheetPBSS8110S,126 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
Power - Max: 830mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: PBSS8110
Description

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The PBSS8110S,126 is a versatile transistor categorized under Transistors - Bipolar (BJT) - Single. This device is designed for switching and amplifier applications, and can be used for both high speed and low noise circuits. It is suited for use in amplifier circuits requiring wide dynamic range and low noise performance, and can be used in applications such as audio power amplifiers and power switching.

PBSS8110S,126 consists of three main components: source, base, and collector. It is built with a high-current bipolar transistor and a switching unit. The source connects to the emitter, the base connects to the collector, and the collector connects to the emitter. These three components form a junction, which is where the current is generated. The junction is surrounded by a semiconductor material that is used to control the current.

The working principle of PBSS8110S,126 involves the exchange of electrons between the base and collector. When voltage is applied to the base, a current is generated between the collector and emitter. This current is then used to control the collector-emitter current by changing the resistance of the junction. This process can be used to either increase or decrease the current, depending on the application.

PBSS8110S,126 is suitable for a wide range of applications. It can be used in audio power amplifiers, switching circuits, and voltage regulators, as well as communications, automotive, and consumer electronics. The high current capability and low noise performance make it an ideal choice for use in wireless and wired consumer electronic products since it provides a low cost solution for devices requiring higher switching and amplification performance.

This transistor can also be used in a variety of industrial applications. Due to its high current capability and low noise performance, PBSS8110S,126 can be used in temperature, pressure, and flow control systems. It is also suitable for use in medical and laboratory equipment, as well as power tools and robotics.

PBSS8110S,126 has many advantages over other transistors. First, its high current capability and low noise performance make it an ideal choice for switching and amplifier applications. Additionally, the current control is adjustable, allowing for a wide range of applications. Furthermore, this device is relatively small, making it easy to incorporate into a circuit. Finally, it is relatively low cost, making it a great option for budget conscious projects.

In conclusion, PBSS8110S,126 is a versatile transistor categorized under Transistors - Bipolar (BJT) - Single. It is suitable for a wide range of applications due to its high current capability and low noise performance. Additionally, its current control is adjustable, its size is relatively small, and its cost is relatively low. All of these factors make PBSS8110S,126 an ideal choice when looking for a transistor suitable for switching and amplifier applications.

The specific data is subject to PDF, and the above content is for reference

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