Allicdata Part #: | PBSS4160DSZ-ND |
Manufacturer Part#: |
PBSS4160DSZ |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | PBSS4160DS/SOT457/SC-74 |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 150... |
DataSheet: | PBSS4160DSZ Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05755 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 1mA, 5V |
Power - Max: | 700mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
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PBSS4160DSZ is an 8-phase transistor array specially designed for automotive applications, high-energy applications, and other power load requirements. It is a bipolar transistor, with PNP and NPN transistors paired. It is housed in a standard 16-pin surface mount SOIC package, providing 1600V isolation to protect the device from high voltage stress.
The maximum collector current of PBSS4160DSZ is 1.2A and the on-transistor gains are specified for each phase at a minimum of 250. Additionally, its relative DC current gain is greater than 200, along with its collector-emitter breakdown voltage of 1600V.
PBSS4160DSZ is suitable for phase current monitoring applications, providing phase current reading with a low noise and low offset outputs. Open-drain outputs on PBSS4160DSZ are also capable of driving high capacitive loads and support a range of operating voltages up to 18V. Its reverse-bias breakdown voltage range of 1V makes it ideal for use in automotive applications as well.
Similarly to other transistors, PBSS4160DSZ transistor array works based on the principles of the Hall effect and conductivity modulation. Specifically, the higher the collector current, the higher the output voltage will be. As the collector current increases, its output voltage increases, so that the output voltage is proportional to the collector current.
When the current passes through a tube of semiconducting material, it creates a magnetic field which in turn affects the electrons in the material and the current present in the device. For each increase or decrease of the current, the electron behavior changes, resulting in an alternating current. When the output voltage reaches a certain point, the transistor operates in a linear region, where the output voltage is dependent on the linear rise of the current. Additionally, due to the Hall effect, the output current will also affect the output voltage, making it proportional to the collector current.
Additionally, the PBSS4160DSZ transistor array integrates two low-power PNP transistors and two NPN transistors, which are connected in a special way to created a bridge configuration. This bridge circuit amplifies the collector current, multiplying it several times more and producing a more powerful output voltage. Each phase of the device provides high-gain, high-speed, and low-power operation, making it ideal for high-voltage and large-scale applications.
Due to its design, PBSS4160DSZ is suitable for applications including bidirectional DC motor control, phase current monitor and protection, robotics, and smart grid control. Furthermore, its integration of low-power transistors allows the device to remain operational in thermal and high-voltage operation with no loss of performance, making it an ideal choice for operation in extreme environmental conditions.
In conclusion, PBSS4160DSZ is a precision transistor array designed specifically for automotive applications, high-energy applications, and other power load requirements. It is a bipolar transistor, with PNP and NPN transistors paired, which works based on the principles of the Hall effect and conductivity modulation. Due to its design, PBSS4160DSZ is suitable for applications including bidirectional DC motor control, phase current monitor and protection, robotics, and smart grid control. Additionally, its low-power transistors make the device perfectly suited for use in extreme environmental conditions.
The specific data is subject to PDF, and the above content is for reference
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GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...