PBSS5160U,115 Allicdata Electronics
Allicdata Part #:

1727-5761-2-ND

Manufacturer Part#:

PBSS5160U,115

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 60V 0.7A SOT323
More Detail: Bipolar (BJT) Transistor PNP 60V 700mA 185MHz 415m...
DataSheet: PBSS5160U,115 datasheetPBSS5160U,115 Datasheet/PDF
Quantity: 21000
3000 +: $ 0.04366
6000 +: $ 0.03929
15000 +: $ 0.03493
30000 +: $ 0.03275
75000 +: $ 0.02911
Stock 21000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
Power - Max: 415mW
Frequency - Transition: 185MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: PBSS5160
Description

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PBSS5160U,115 Application Field and Working Principle

N - Channel Enhancement Mode MOSFET ( Etched with PBSS5160U,115) is a transistor that has been categorized into the kind of single Bipolar Junction Transistors (BJT). As a type of transistor, it is specially used to control the flow of electrons of the circuit by varying the voltage and current across the gate. The characteristics, performance and relations between applied voltage and current of this transistor have a big impact on its application fields.

The Characteristic

The two polarities of the MOSFET, n - channel and p - channel, are embedded in a single integrated device. The two kinds of transistors can be used to create a cascode, enabling the transistor to provide proper square current that gate - source voltage exceeds threshold voltage. This kind of transistor also has higher gain and faster channel delivery time, which makes it perfect for digital, as well as linear, circuit design.

Applications

PBSS5160U,115 is widely used in applications such as audio amplifiers, amplifier stages, class - D audio amplifiers, full bridge circuits, process control, power converters, ESD protection, analog to digital converters, computer systems, digital signal processing and various types of optoelectronic components. Owing to its high power efficiency and the fact that it can work on very low input gates, PBSS5160U,115 is frequently used for power applications.

Working Principle

The output voltage of the transistor is varied by controlling the applied voltage of the gate. The application of a gate voltage controls the flow of electrons from drain to source of the transistor. When the gate voltage exceeds the threshold voltage, the transistor enters the active region, allowing electrons to flow from drain to source and storing a charge on the gate.

When the gate voltage is equal to or less than the threshold voltage, the transistor is cut off and no current flows in the circuit. It is important to note that the gate voltage may have varying effects on the transistors depending on the source and drain voltages. Generally, if the source and drain voltages increase, then a higher gate voltage must be applied to attain the same on-state current.

Conclusion

The PBSS5160U,115 transistor is a single Bipolar Junction Transistor (BJT) that is widely used for audio amplifiers, process control, power converters and other applications. The response of the transistor is controlled by voltage applied to its gate. When the applied voltage exceeds the threshold voltage, the transistor moves into the active region and electrons can flow from source to drain.

This article provided an overview of the PBSS5160U,115 transistor, its applications and working principle. The applications and other pertinent information ensure that the device continues to be a popular choice for use in various applications.

The specific data is subject to PDF, and the above content is for reference

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