Allicdata Part #: | 1727-2517-2-ND |
Manufacturer Part#: |
PBSS4220PANSX |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS 2NPN 20V 2A 6HUSON |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 2A... |
DataSheet: | PBSS4220PANSX Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.12976 |
6000 +: | $ 0.12139 |
15000 +: | $ 0.11302 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 320mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1A, 2V |
Power - Max: | 370mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | DFN2020D-6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PBSS4220PANSX is a state-of-the-art current controlled array of Bipolar Junction Transistors (BJTs). As a member of this array, it is capable of producing high current gains with relatively low collector-to-emitter voltages. This particular part can be used as an amplifier, switch, or transducer in a variety of applications, such as audio amplification, embedded system design, power management, and other similar applications. In addition, its wide operating temperature range of -55°C to 175°C ensures excellent reliability and performance in demanding environments.
The array design of the PBSS4220PANSX utilizes three bipolar junction transistors (BJTs) connected in an N-channel and P-channel configuration. This type of configuration exerts greater control over the current passing between the collector and the emitter of the individual BJTs. This greater control allows for the easy integration of larger current gains, improved input-to-output isolation, reduced power consumption, and decreased output noise levels. In addition, its broad input current range of 10mA to 10A facilitates a wide range of operating conditions, allowing for greater versatility in its application.
The array design also enables the PBSS4220PANSX to function with greatly improved operating efficiency. In order to achieve this, each of the components contained within the array is arranged in a specific manner. The central BJT is the driver, while the two surrounding BJTs are the followers. The driver BJT is connected to the input, while the followers are connected to the output. When a current is applied to the driver, the two followers receive their input from the driver, and their output is generated accordingly. In this manner, the overall output current is increased in increments, further improving operating efficiency.
The PBSS4220PANSX also features an integrated gate voltage capacitor, which allows the device to produce fast responses to changing current signals. This feature is especially beneficial when used in audio amplifiers, as it ensures accurate and timely audio attack and decay. In addition, the integrated resistor and capacitor combination helps to reduce power consumption, allowing for the device to be employed in energy-conscious applications.
The PBSS4220PANSX is a highly versatile array of BJTs that provides an array of features and benefits for a variety of applications. Its unique array design enables fast responses, higher current gains, and improved operating efficiency. The integrated gate voltage capacitor aids in providing quick and accurate audio attack and decay. Finally, its wide operating temperature range, along with its broad input current range, grants excellent reliability and long-term performance in demanding applications.
The specific data is subject to PDF, and the above content is for reference
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GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...