PBSS4112PANP,115 Allicdata Electronics
Allicdata Part #:

1727-1068-2-ND

Manufacturer Part#:

PBSS4112PANP,115

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN/PNP 120V 1A 6HUSON
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 120V 1A 12...
DataSheet: PBSS4112PANP,115 datasheetPBSS4112PANP,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.10527
6000 +: $ 0.09848
15000 +: $ 0.09168
30000 +: $ 0.08693
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 2V
Power - Max: 510mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6
Base Part Number: PBSS4112PAN
Description

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Bipolar junction transistors, also known as BJTs, have become a very important component in many electronic circuits. In their most basic form, they operate by carrying out two basic functions: amplification and switching. These transistors are widely used in all kinds of electronic devices, including those in the fields of communication, computing, healthcare, and aerospace. The array form of bipolar junction transistor is the PBSS4112PANP,115. In this article, we will discuss its application fields and working principle.

The PBSS4112PANP,115 is an array form of bipolar junction transistors, which is suitable for use in television, radio, and other consumer electronics. This device has two NPN transistors, four pnp transistors, and five internal pins, thus making it suitable for high voltage applications. The transistors are built on a 45-volt single package, and the package is mounted horizontally. This transistor array is rated to operate at 22V, with a junction temperature of -55 to +175 degrees Celsius.

The PBSS4112PANP,115 is mainly used in television and radio, providing excellent broadcast signals. This device is specifically suitable for applications that require high-gain bandwidth, the ability to reduce crosstalk, and enhanced image quality. In particular, it can achieve up to a 600 percent signal gain. This makes it ideal for television transmitters, receivers, and signal converters. Additionally, it can be used in radar systems, since it offers lower signal noise and greater accuracy.

The PBSS4112PANP,115 also finds applications in radio communication systems, where it is often used as the front-end amplifier. This is because the device offers a high degree of linearity, which can help to reduce the amount of distortion and noise introduced into the system. As such, this transistor array is often used as part of the RF amplifier stages in radio systems. Furthermore, this device can be used as part of the power amplifier circuit in amplifying audio signals.

The PBSS4112PANP,115 array works on the principle of bipolar junction transistors (BJTs). When a small current flows between the emitter and the base, it creates an electric field, which in turn causes a much larger current flow between the collector and the emitter. This current flow is responsible for amplification, which can then be used to manipulate the flows of electrical signals. Thus, the PBSS4112PANP,115 allows for switching, amplification, frequency selection, and other useful functions in a wide range of electronic devices.

In conclusion, the PBSS4112PANP,115 is an array form of bipolar junction transistors (BJTs). It is mainly used in television, radio, and other consumer electronics, offering a high degree of linearity and providing excellent broadcast signals. This device can also be used in radar systems and radio communication systems, and it works on the principle of BJTs by allowing for switching and amplification. Therefore, this device is an invaluable tool in many electronic devices.

The specific data is subject to PDF, and the above content is for reference

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