PBSS2515VS,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-5718-2-ND |
Manufacturer Part#: |
PBSS2515VS,115 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS 2NPN 15V 0.5A SOT666 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 15V 50... |
DataSheet: | PBSS2515VS,115 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.07089 |
8000 +: | $ 0.06660 |
12000 +: | $ 0.06230 |
28000 +: | $ 0.05715 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 150 @ 100mA, 2V |
Power - Max: | 200mW |
Frequency - Transition: | 420MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-666 |
Base Part Number: | PBSS2515 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PBSD2515VS, 115 is a high-reliability, high-speed discreted, bipolar (BJT) array. It is an advanced device that is optimized for applications requiring maximum performance, such as high current drive, high speed, noise immunity, and high reliability.
The PBSD2515VS, 115 consists of two emitter-base isolated, isolated NPN transistors packed in a single package. With 15V maximum collector-emitter voltages and a wide range of collector current ratings, the PBSD2515VS, 115 provides superior performance for high speed and high current drive applications. It also features an innovative "active" collector-to-emitter clamping that provides protection from output voltage or current transients.
In addition to its high-performance features, the PBSD2515VS, 115 also has excellent noise immunity performance. Its isolation also allows for increased thermal efficiency for higher speed and current drive applications. Its built-in active clamping also reduces the need for external components when controlling voltage or current transients.
The PBSD2515VS, 115 comes in a small TSSOP (small outline transistor package) that offers the lowest possible profile and the best electrical performance in its class. This results in improved high speed performance, enhanced power dissipation, and improved thermal performance.
The working principle of the PBSD2515VS, 115 is based on the use of two NPN transistors connected in the same package. Each isolated NPN transistor is electrically and thermally isolated from the other and has an independent emitter and collector connection. When an input signal is applied to the emitter of one of the transistors, its collector will receive a current. The current through the other transistor is then modulated by the current through the first transistor.
The PBSD2515VS, 115 device is ideal for applications where high current drive, high speed, and high-reliability are required. It is used in many automotive, industrial, and medical applications, including motor control, power conversion, battery management, and medical test equipment.
The PBSD2515VS, 115 is also used in applications where noise immunity performance is important, such as in analog-to-digital and digital-to-analog conversion and signal processing. Additionally, its low power consumption, small size, and wide range of collector current ratings make it a great choice for applications where space and power are limited.
The PBSD2515VS, 115 is a reliable and high-performance, bipolar (BJT) array that is optimized for applications requiring maximum performance. It offers excellent performance for high current drive, high speed, and noise immunity, as well as the highest thermal efficiency in its class. Its small size and wide range of collector current ratings make it an ideal choice for space- and power-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...