PBSS4260QAZ

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	190mV @ 50mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 2A, 2V
Power - Max:	325mW
Frequency - Transition:	180MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-XDFN Exposed Pad
Supplier Device Package:	DFN1010D-3
Base Part Number:	PBSS4260

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Introduction

The PBSS4260QAZ is a single bipolar junction transistor (BJT) designed for high-temperature operations and are packaged in surface-mount packaging. These transistors are designed with a low saturation voltage and operated at high temperature, making them perfect for use in industrial applications that require high performance, reliability and long-term operation. Due to their high temperature operation capabilities, they are often used in working environments that often exceed the thermal ratings of conventional components.

Application Field

The PBSS4260QAZ transistors are designed for applications where reliability and high-temperature operation are paramount. These include applications such as:

• Industrial Control applications
• Test Equipment
• Automotive Electronics
• High Power Switching
• High Temperature Motors
• Telecommunications
• LED Lighting

The PBSS4260QAZ can also be used in military and aerospace applications, due to the transistors\' ruggedized packaging and high temperature capabilities.

Working Principle

A BJT consists of two sections; the base and emitter, separated by an intrinsic layer known as the base region. An electric current flows through the base, which provides a current amplification that passes between the collector and the emitter. The PBSS4260QAZ is a low-power BJT, so it can operate with a collector current of up to 100mA. The transistor is configured so that the base current is supplied through a resistor, creating a small control voltage within the base region that controls the flow of current through the collector and the emitter. This control voltage changes the collector current so that it can be controlled from the base current. The current amplification of the transistor also has a effect on the collector current, allowing it to be used as a power switch for controlling power in a system. When the transistor is used in its linear region, the most commonly used mode is the Common Emitter Configuration, in which the base-emitter voltage (Vbe) is fixed. This configuration is usually used for DC gain control amplifiers and current sources.

Conclusion

In conclusion, the PBSS4260QAZ is a single bipolar junction transistors (BJT) specifically designed for high-temperature operations and are packaged in surface-mount packaging. These transistors are perfect for use in industrial applications such as industrial controls, test equipment, automotive electronics, high-power switching and telecommunications. The PBSS4260QAZ is also suitable for military and aerospace applications due to its ruggedized packaging and high temperature capabilities. Finally, the transistor has a low-power BJT configuration and a linear common emitter configuration, allowing the base-emitter voltage to be used for DC gain control amplifiers and current sources.

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