PBSS5540Z,115 Allicdata Electronics
Allicdata Part #:

1727-3915-2-ND

Manufacturer Part#:

PBSS5540Z,115

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 40V 5A SOT223
More Detail: Bipolar (BJT) Transistor PNP 40V 5A 120MHz 2W Surf...
DataSheet: PBSS5540Z,115 datasheetPBSS5540Z,115 Datasheet/PDF
Quantity: 3000
1000 +: $ 0.10895
2000 +: $ 0.09933
5000 +: $ 0.09293
10000 +: $ 0.08652
25000 +: $ 0.08545
Stock 3000Can Ship Immediately
$ 0.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 160mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Power - Max: 2W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: PBSS5540
Description

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The PBSS5540Z,115 is part of the Transistors - Bipolar (BJT) - Single family of transistors. It is a high voltage, low current, low power NPN bipolar junction transistor (BJT). This type of transistor is used in a wide range of applications including amplifiers, switching applications and small signal switching.

The PBSS5540Z,115 has a maximum peak collector current of 4.5mA and a peak collector-emitter voltage (Vceo) rating of 80V. The transistor is manufactured on a D2PAK package and can operate at temperatures up to 150 C. Its gain ratings range from 40-200.

The PBSS5540Z,115 can be used in digital circuits, as well as analog circuits. It is particularly useful in switching applications, such as digital logic gates, where its high-gain characteristics make it ideal for making digital logic decisions. It can also be used in switching power supplies, where it can provide high frequency switching for controlling the power levels and providing power regulation.

The working principle of the PBSS5540Z,115 is based on the PN junction. The PN junction consists of two semiconductor materials that are separated by an insulating layer. When current passes through the PN junction, an electric field is created which causes charge carriers to cross the junction, thus creating a current flow. This flow of current is what switches the transistor on or off, depending on the current through the base electrode.

The PBSS5540Z,115 is also used to amplify signals. It works by using its base-emitter junction to control the amount of voltage flowing through its collector-emitter junction. When a small current flows through the base, it causes a larger current to flow through the collector-emitter junction, thus amplifying the signal. This type of amplifier is known as a common emitter amplifier.

In addition to its use in amplifying and switching applications, the PBSS5540Z,115 can also be used in power supply applications. It can be used in converter circuits to control the output power from the converter and in motor control circuits to provide speed and torque control to motor drives.

The PBSS5540Z,115 is a versatile Transistor – Bipolar (BJT) – Single type of transistor which can be used in a variety of applications. Its low current and high-voltage ratings make it particularly suitable for high-speed switching, amplifying, and power supply applications.

The specific data is subject to PDF, and the above content is for reference

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