PDTA115TK,115 Allicdata Electronics
Allicdata Part #:

568-2112-2-ND

Manufacturer Part#:

PDTA115TK,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS PNP 250MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA115TK,115 datasheetPDTA115TK,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK
Base Part Number: PDTA115
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PDTA115TK, or NPN Pre-Biased Transistor can be used in many applications. This type of transistor is a single, pre-biased component with a NPN structure. It has a variety of uses and comes with various advantages. The main advantages include low supply current, improved hold-up times, and prolonged life expectancy.

The device has a wide range of application fields, including power transistors for amplifier, interface and control applications, switch-mode power supplies, and motor drives. It is also widely used in microwave power transistors, including amplifiers, switches, oscillators, etc. In addition, it can be used in a range of other applications, such as protection, current sources, and regulators.

The working principle of PDTA115TK is related to the NPN structure that it incorporates. The NPN structure consists of an emitter, collector, and base. When a negative voltage is applied to the emitter and a positive voltage is applied to the collector, the electrons move from the collector to the emitter, creating a current. This current is then used to control the output of the transistor.

In a pre-biased application, the transistor is set up in either a cut-off or saturation state before it is activated. Once the proper parameters are met, the transistor is turned on, allowing for either the current to be turned ON or the current to be stopped. This makes pre-biased transistors useful for controlling power in a variety of applications.

The PDTA115TK is also ideal for power switching applications. When the voltage between the collector and emitter is above the NPN threshold voltage, the transistor is turned off and the current is stopped. When the voltage is below the threshold, the transistor turns back on and the current is allowed to flow through, allowing the device to control the power output.

Given the wide range of application fields, the PDTA115TK is a versatile and extremely useful component. Its low supply current and improved hold-up time make it ideal for many applications and greatly extend its usability. In addition, the pre-biased structure allows for it to be used in a variety of power control applications, lending it further versatility.

The specific data is subject to PDF, and the above content is for reference

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