PDTA123JE,115 Allicdata Electronics
Allicdata Part #:

PDTA123JE,115-ND

Manufacturer Part#:

PDTA123JE,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS PNP 150MW SC75
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA123JE,115 datasheetPDTA123JE,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75
Base Part Number: PDTA123
Description

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Transistors - Bipolar (BJT) - Single, Pre-Biased

PDTA123JE,115 Application Field and Working Principle

The PDTA123JE,115 is a single pre-biased transistor, developed by Sanyo, which is widely used in the automotive electronics industry. It is specifically designed towork in environments with high temperatures, humidity, and dust, and has a wide range ofapplications and is ideal for use in cars, trucks, buses, and other vehicular applications. Itis composed of MOS and low voltage NPN transistors, and this combination increases itsdurability and reliability.

The PDTA123JE,115 is a NPN type of pre-biased transistors. This transistor canoperate with an increased current and voltage output compared to other NPN transistors.It is suitable for applications where low impedance signals are required, such as in motorcontrollers, where high accuracy and fast response is demanded. The device is also capableof handling high temperature environments, which is a vital consideration for automotiveelectronic systems as they are subjected to extreme temperatures.

The working principle of the PDTA123JE,115 is surprisingly simple. It consistsof a NPN transistors that is biased in a particular way allowing it to provide excellentperformance in terms of current and voltage outputs. When the voltage across the devicegrows, an internal stack of resistors act in parallel, pulling the device into a saturated stateuntil the resistance drops enough to provide the desired output. Since the device is biasedinto a saturated state, it can provide a high level of resistance and stability even at hightemperature.

In addition to its use in automotive applications, the PDTA123JE,115 is alsocommonly used in other applications such as communications equipment, power supplies,and signaling systems. It is also used in sensor and measurement systems, which requirehigh accuracy and very small output. The device is also suitable for use in other low-powerapplications such as battery-powered systems, medical equipment, and consumerelectronics.

The PDTA123JE,115 is a very versatile device and can be used in a variety ofapplications. Its low power requirements make it well suited for automotive applications,as it is efficient and reliable in a high temperature environment. Its ability to provide lowimpedance signals make it ideal for use in motor controllers, where accuracy and fastresponse are essential. Its general versatility makes it suitable for use in a variety of otherapplications, where precise control of current and voltage is required.

The specific data is subject to PDF, and the above content is for reference

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