PDTA323TK,115 Allicdata Electronics
Allicdata Part #:

PDTA323TK,115-ND

Manufacturer Part#:

PDTA323TK,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS PNP 250MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA323TK,115 datasheetPDTA323TK,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 15V
Resistor - Base (R1): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK
Description

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PDTA323TK,115 application field and working principle

The PDTA323TK,115 is a pre-biased single bipolar transistor (BJT). It is an NPN type silicon complementary transistor and is used for general-purpose amplification and switching applications.

The PDTA323TK,115 is a two-terminal devices composed of an NPN junction. It has a collector as the main terminal, as well as an emitter, and these two terminals are connected internally by a heavily doped region known as the base. This junction is responsible for the transfer of electrons from the base to the collector, or vice versa, when a voltage is applied between the base and the emitter. The current flow is hinged on the voltage placed on the base-emitter junction.

The PDTA323TK,115 has an amplification factor of 115, which means that when base current changes by one microamp, the collector current changes by 115 microamps. The gain is an important factor in determining the gain-bandwidth ratio that affects a transistor\'s operation.

The PDTA323TK,115 is pre-biased, meaning that it is designed to work with a predetermined voltage applied to collector and emitter. This reduces the need to adjust the bias voltage, making it easier to use and more reliable. Pre-biased transistors offer a greater mA/V efficiency than regular transistors, making them ideal for power amplifiers used in audio systems. They also have a lower gain-bandwidth ratio, which means they can transfer signals faster.

In terms of its applications, the PDTA323TK,115 is mainly used in audio systems, where it is usually employed as a power amplifier. It is also often used in a variety of switching applications, such as interfacing circuits with logic signals in control units, as well as in linear amplifiers for general-purpose amplification.

In conclusion, the PDTA323TK,115 is a single pre-biased bipolar transistor (BJT) with an amplification factor of 115. It is mainly used in audio systems as a power amplifier, and is also employed in various switching and linear amplifying applications. It offers a higher power efficiency than regular transistors, and its pre-biased feature makes it easier and more reliable for applications.

The specific data is subject to PDF, and the above content is for reference

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