PEMH13,315 Allicdata Electronics
Allicdata Part #:

PEMH13,315-ND

Manufacturer Part#:

PEMH13,315

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2NPN PREBIAS 0.3W SOT666
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: PEMH13,315 datasheetPEMH13,315 Datasheet/PDF
Quantity: 1000
8000 +: $ 0.03718
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: --
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Description

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N-Channel Monolithic Pre-Biased, Pre-Assembled 13,315 Matching Transistor Arrays, otherwise known as PEMH13,315, provide high power-handing capabilities and superior linearity in a single, compact package. With its unique design, the PEMH13,315 offers high performance and low power consumption without compromising on quality. In this article, we will discuss the application field and working principle of the PEMH13,315

Application Field

The PEMH13,315 integrates four N-Channel Monolithic Arrays in a compact size, making it perfect for space-constrained applications. The PEMH13,315 can be used in a range of industries, including communication, industrial automation, automotive, and consumer electronics. The chip is designed to operate at a maximum temperature range of -65°C to +150°C, allowing it to be used in temperature-sensitive applications. Furthermore, its operating frequency is up to 10 kHz, which makes it well-suited for high-speed switching applications.

In addition, the PEMH13,315 is also suitable for amplifying and driving both AC and DC signals in applications requiring high slew rate, high dynamic range and low distortion. The excellent linearity of the PEMH13,315 allows it to operate without over-current protection circuitry, making it more efficient and reliable. Furthermore, the chip’s low power consumption ensures that it conserves energy and reduces system costs. It also features thermal protection, which helps to guard against thermal runaway.

Working Principle

PEMH13,315 incorporates four N-Channel Monolithic Arrays in a compact size. Each array consists of an input transistor and a controlled output transistor, which are connected in a common source configuration. Both the output and input transistors share a common gate for improved matching and minimal drift. The input transistor operates over a typical 5V peak-to-peak supply voltage range. The chip uses the common source configuration to control the output transistor’s current and voltage transfer function.

The chip is designed to perform its switching functions using a negative logic control. This allows the output voltage to drop sharply when the input voltage is high. Additionally, the PEMH13,315 uses a 4-bit current programming to adjust the output current range up to 15 mA. This allows the output voltage swing to be precisely optimized for higher speeds and linearity. The device also feature temperature compensation circuitry that further enhances linearity ensuring consistent performance over a wide temperature range.

The PEMH13,315 is an ideal solution for high power-handling and linearity applications, particularly in space-constrained and temperature-sensitive applications. It offers high performance with low power consumption and minimal drift, and features a negative logic control and 4-bit current programming, allowing precise optimization the output voltage swing.

The specific data is subject to PDF, and the above content is for reference

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