Allicdata Part #: | PEMH2,115-ND |
Manufacturer Part#: |
PEMH2,115 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS 2NPN PREBIAS 0.3W SOT666 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | PEMH2,115 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.04275 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | -- |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-666 |
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PEMH2,115 is part of the PEM series of pre-biased small-signal transistors, with important applications in electronic devices and products. It is designed for low voltage and current applications. This series is designed for use in oil and moist environments.
The PEMH2,115 features a pre-biased current gain beolow 50, as well as a low power dissipation rating of 0.5W. This transistor is compatible with high frequency signals, with a frequency response of up to 200MHz.
PEMH2,115 is a bipolar-type transistor, meaning it has two junction junctions. It consist of three layers: a base layer, an emitter layer and a collector layer. The base layer is connected to the emitter layer, and the collector is connected to the emitter layer. The PEMH2,115 features a pre-biased current gain, meaning the base current is already applied to the base layer before the transistor is turned on. This current gain allows the transistor to operate faster than a regular bipolar transistor.
The PEMH2,115 is an array of pre-biased transistors, meaning it has several transistors connected in series. This allows the power to be distributed evenly across each transistor, as well as reduced power consumption. The PEMH2,115 is designed to work in an oil or moist environment, making it a suitable choice for industrial applications.
The working principle of the PEMH2,115 is based on the idea of manipulating the current through the base layer in order to control the current through the collector layer. When base current is applied to the base layer, it creates a negative voltage that applies a voltage to the base layer. This voltage increases as the base current increases, allowing for more current to pass through the collector layer. The current through the collector layer is proportional to the current through the base layer. This increases the speed and efficiency of the transistor.
The PEMH2,115 is an ideal choice for a wide range of applications, such as in audio amplifiers, telecommunication systems, industrial controllers, and medical equipment. Due to its pre-biased current gain, the PEMH2,115 is also a great choice for high-frequency applications. With its low-power dissipation, this transistor is ideal for low voltage and current applications.
The specific data is subject to PDF, and the above content is for reference
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