
Allicdata Part #: | PEMH14,115-ND |
Manufacturer Part#: |
PEMH14,115 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS 2NPN PREBIAS 0.3W SOT666 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | ![]() |
Quantity: | 1000 |
4000 +: | $ 0.04275 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | -- |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-666 |
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Transistors - Bipolar (BJT) - Arrays, Pre-Biased
PEMH14,115 is a Pre-Biased, Bipolar Junction Transistor (BJT) array. It is designed to be used in RF power amplifiers and other high-frequency applications. This device is an integrated circuit that has four transistors in a single package.
The PEMH14,115 can provide up to 15dB of gain in a 50ohm system with a 10% bandwidth of 8GHz. Its operation temperature range is -55℃ to +125℃. This device has a high rise, low turn-on delay of 2ns and a low-bias current of 600mA. It can provide low-noise operation with a low power consumption of just 70mW.
Application Field
The PEMH14,115 is ideal for a variety of applications, including high-frequency amplifiers and linear amplifiers. This device is also suitable for general purpose applications, such as automotive and communication systems, as well as RF/Microwave applications. It can also be used in other applications, such as audio amplifiers, digital-to-analog converters, and analog-to-digital converters.
Working Principle
The PEMH14,115 is a pre-biased amplifier that operates in the common emitter configuration. This device is designed to provide high gain with low power consumption and low noise. It is comprised of four bipolar junction transistors (BJT’s) that are connected in a common emitter configuration. In this configuration, the base-collector junctions of the transistors are reverse-biased, while the base-emitter junctions are forward-biased. This is known as a voltage pre-biased array.
When a signal is applied to the input of the PEMH14,115, the signal current passes through the circuit and is amplified by the transistors. The signal is then output from the device’s collector. The signal is amplified by a factor of the current gain (beta) of the transistors. The gain of the device depends on the specific parameters of the transistors, such as their Beta and current amplification factor (CMRR). The gain of the device can be adjusted by changing the bias voltage of the transistors.
The PEMH14,115 is an ideal solution for applications requiring high gain, low power consumption, and low noise. Its pre-biased configuration allows for easy implementation and eliminates the need for external components, resulting in a compact and cost-effective solution.
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