PEMH14,115 Allicdata Electronics
Allicdata Part #:

PEMH14,115-ND

Manufacturer Part#:

PEMH14,115

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2NPN PREBIAS 0.3W SOT666
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: PEMH14,115 datasheetPEMH14,115 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.04275
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: --
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Description

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Transistors - Bipolar (BJT) - Arrays, Pre-Biased

PEMH14,115 is a Pre-Biased, Bipolar Junction Transistor (BJT) array. It is designed to be used in RF power amplifiers and other high-frequency applications. This device is an integrated circuit that has four transistors in a single package.

The PEMH14,115 can provide up to 15dB of gain in a 50ohm system with a 10% bandwidth of 8GHz. Its operation temperature range is -55℃ to +125℃. This device has a high rise, low turn-on delay of 2ns and a low-bias current of 600mA. It can provide low-noise operation with a low power consumption of just 70mW.

Application Field

The PEMH14,115 is ideal for a variety of applications, including high-frequency amplifiers and linear amplifiers. This device is also suitable for general purpose applications, such as automotive and communication systems, as well as RF/Microwave applications. It can also be used in other applications, such as audio amplifiers, digital-to-analog converters, and analog-to-digital converters.

Working Principle

The PEMH14,115 is a pre-biased amplifier that operates in the common emitter configuration. This device is designed to provide high gain with low power consumption and low noise. It is comprised of four bipolar junction transistors (BJT’s) that are connected in a common emitter configuration. In this configuration, the base-collector junctions of the transistors are reverse-biased, while the base-emitter junctions are forward-biased. This is known as a voltage pre-biased array.

When a signal is applied to the input of the PEMH14,115, the signal current passes through the circuit and is amplified by the transistors. The signal is then output from the device’s collector. The signal is amplified by a factor of the current gain (beta) of the transistors. The gain of the device depends on the specific parameters of the transistors, such as their Beta and current amplification factor (CMRR). The gain of the device can be adjusted by changing the bias voltage of the transistors.

The PEMH14,115 is an ideal solution for applications requiring high gain, low power consumption, and low noise. Its pre-biased configuration allows for easy implementation and eliminates the need for external components, resulting in a compact and cost-effective solution.

The specific data is subject to PDF, and the above content is for reference

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