PEMH15,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2172-2-ND |
Manufacturer Part#: |
PEMH15,115 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS 2NPN PREBIAS 0.3W SOT666 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | PEMH15,115 Datasheet/PDF |
Quantity: | 36000 |
4000 +: | $ 0.04479 |
8000 +: | $ 0.03895 |
12000 +: | $ 0.03311 |
28000 +: | $ 0.03116 |
100000 +: | $ 0.02590 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | -- |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-666 |
Description
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, PEMH15,115PEMH15,115: Application Field and Working Principle
The PEMH15,115 array is a member of the bipolar transistor family, specifically designed as a pre-biased device. It is designed to operate with a common emitter configuration using both NPN and PNP transistors. The device is best suited for applications that require very low DC offset voltages and high speed switching such as switch-mode power amplifiers, oscillators, and low noise amplifiers.FunctionThe PEMH15,115 is designed to provide the user with the optimal combination of speed, low DC offset, and low output voltage noise in a pre-biased configuration. As a result, the PEMH15,115 is an excellent choice for high-frequency switching applications where fast transition times, stable transition voltages, and low noise are desired.Working PrincipleThe PEMH15,115 utilizes two stages for its operation. The first stage consists of a NPN transistor and a load resistance that is connected in series. This stage is responsible for providing the necessary current for the second stage. The second stage is the PNP transistor that is pre-biased by the NPN transistor. This pre-bias configuration creates an input impedance of high-valued resistor, which allows for a high transition speed between the two transistors. This stage is also responsible for providing the low output voltage noise.Features and BenefitsThe PEMH15,115 offers a host of features and benefits that make it an ideal choice for many types of switching applications. These include:- High speed switching transitions
- Low DC offset voltage
- Low output voltage noise
- Efficient power dissipation
- High temperature operating ranges
The specific data is subject to PDF, and the above content is for reference
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