PEMH19,115

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Bipolar Junction Transistor (BJT) Arrays are a type of semiconductor array that consists of multiple, interconnected bipolar junction transistors. In BJT arrays, the transistors are structurally organized such that each device’s collector is connected to the base of the next one in the chain. The result is devices that have a relative low base-width modulation, which significantly enhances the performance of the BJT array.

The PEMH19,115 Pre-Biased Bipolar Junction Transistor (BJT) array is an example of such a device. The device is a pre-biased array of BJTs with a nominal collector-emitter voltage of 15 volts. The PEMH19,115 is a high reliability, industrial-grade transistor array that is specifically designed for applications requiring high-temperature performance and durability. It has an operating temperature range of -55°C to +125°C, and is designed for long-term use in harsh environments including automotive and avionics applications.

The PEMH19,115 offers a wide range of advantages over standard discrete BJTs, such as improved performance and reduced system costs. The main applications for this device include DC/DC converters, AC relays, switch-mode power supplies, power conditioning, and amplifier circuits. Additionally, its narrow base-width modulation allows for lower base currents resulting in reduced power dissipation. The device is also designed for use in linear and switching applications, allowing for a more flexible output voltagematching circuit.

The PEMH19,115 is a versatile device, and can be used in a wide range of applications. Its pre-biased design is particularly useful for applications requiring reliable operation in harsh environments. Additionally, its improved performance and increased efficiency make it ideal for DC/DC converters, AC relays, switch-mode power supplies, and amplifier circuits. And its narrow base-width modulation allows for lower power dissipation and improved reliability in these applications.

The working principle behind the PEMH19,115 is based on the fact that a collector-emitter voltage of 15V is created when the base-emitter voltage is equal to 0.7V. This is accomplished by connecting two additional inputs to the base and emitter pins. These two inputs allow the user to control the voltage on the collector-emitter terminals. The two inputs are connected in series between the base and emitter pins, but they can also be configured PNP or NPN dependent on the application. When the base and emitter inputs are applied a DC potential, the bipolar junction transistor is activated, resulting in the collector-emitter voltage being equal to 15V.

In summary, the PEMH19,115 Pre-Biased Bipolar Junction Transistor (BJT) array offers a wide range of advantages over its discrete counterparts, including improved performance and increased efficiency. Its pre-biased design is ideal for applications requiring reliable operation in harsh environments, and its narrow base-width modulation allows for lower power dissipation. Furthermore, its versatile design means it can be used for a variety of applications including DC/DC converters, AC relays, switch-mode power supplies, and amplifier circuits. Lastly, its working principle is based on the fact that a collector-emitter voltage of 15V is created when the base-emitter voltage is equal to 0.7V. All in all, the PEMH19,115 is an ideal choice for applications requiring robust, reliable operation in harsh environments.

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