PEMH18,115

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The PEMH18,115 is a pre-biased array transistor manufactured by Pacific Monolithics Inc. It is an Insulated Gate Bipolar Transistor (IGBT) which contains a specialised gate structure providing pre-biased operation. The intent of such a structure is to allow certain switching operations to occur before the gate bias is applied. This type of IGBT is suitable for applications requiring minimum dead time (i.e. time needed to switch between two states).

The device is specified with an active area consisting of 115 cells (1cm x 1cm). Each cell contains two or three insulated gate N-channel transistors, with the gated and inhibited regions sharing the same drift region. This allows the device to switch between states quickly and reliably in response to gate current.

In conjunction with an appropriate gate driver such as the PEMH425545, the device can be used for applications such as switching in synchronous rectifier configurations. The device can handle up to 150V supply voltages and dissipates approximately 15 W of power when switching between states. The PEMH18,115 can also be used in Control-Unit Drivers and Motor Drivers for high-speed motor control applications.

The device can also be used for applications such as power supply control and automotive applications. In power supply control applications, the device provides a rapid switching time between states and allows hysteresis levels to be set accurately. In automotive applications, the device can provide improved control of mechanical actuators and lighting systems. In both cases, the device can provide improved system efficiency and reduce power losses.

The working principle of the PEMH18,115 is based on the constructions and operation of the insulated gate bipolar transistor (IGBT). The device is a three terminal device with an electron body and an anode formed from an n-type semiconductor. The insulated gate, comprised of silicon dioxide, is between the anode and the gate terminal. By applying a positive voltage on the gate terminal, electrons are attracted towards it, allowing current to flow from the anode to the gate (in positive direction).

The insulated gate can be biased using a current source or by using a voltage divider connected between the anode and the gate terminals. This method allows the current flow to be controlled by the gate bias (or gate voltage). The gate voltage can also be adjusted by externally applying an appropriate voltage source.

When the gate voltage is applied to the anode, the transistor enters a reverse-biased state, effectively blocking all current from the anode to the gate. Conversely, when the gate voltage is applied to the gate terminal, the transistor enters the forward-biased state and allows current flow from the gate to the anode. This is the basic operation of the pre-biased array transistor.

The operation of the device can be optimized by adjusting the gate bias level and the drain-source voltage. The gate bias can be adjusted by using an external voltage source to control the voltage across the insulated gate. This gives the device a limit cycle, where the device can be forced to switch from ON to OFF or OFF to ON when the voltage levels reach a certain point.

The PEMH18,115 is a high-performance pre-biased array transistor, suitable for applications requiring high-speed switching and improved system efficiency. With the ability to switch between states quickly and provide hysteresis levels when necessary, the device can offer reliable and efficient operation in a wide variety of applications. Additionally, its small size and low power consumption make it an ideal choice for any application where size, weight, and power consumption are of concern.

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