PEMH9,315 Allicdata Electronics
Allicdata Part #:

PEMH9,315-ND

Manufacturer Part#:

PEMH9,315

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2NPN PREBIAS 0.3W SOT666
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: PEMH9,315 datasheetPEMH9,315 Datasheet/PDF
Quantity: 1000
8000 +: $ 0.03718
Stock 1000Can Ship Immediately
$ 0.04
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Base Part Number: P*MH9
Supplier Device Package: SOT-666
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PEMH9315 is a pre-biased, array configuration transistor intended for low-noise amplifier applications. It is a very useful device for many types of radio frequency (RF) applications such as amplifiers, filters, and other similar circuit designs. This device is especially beneficial for noise-sensitive applications where low noise characteristics are of the utmost importance.

The PEMH9315 is a three-terminal device that is formed from multiple connected transistors in an array configuration known as a ‘monolithic integrated circuit’ or ‘MIMIC’. The device contains a number of transistors and resistors, arranged in an array, and connected together in such a way that the device behaves like a single transistor.

The PEMH9315 has an excellent noise figure, with a noise figure of 1.3dB at 1GHz and 1.8dB at 2GHz. It also has excellent gain flatness, over a wide frequency range. The device can operate up to frequencies of 4GHz and has a wide voltage swing range of -12V to +12V.

The array configuration of the PEMH9315 provides several advantages that make it ideal for many types of RF applications. The first is that it minimizes the number of devices required in a circuit, saving space and money. Furthermore, the device does not require any type of external biasing or voltage regulation, making it easier to design and build.

The device is manufactured using advanced fabrication techniques, such as dielectric isolation, laser etching, and low-temperature co-fired ceramics (LTCC). These features allow for high-precision components, tightly controlled electrical characteristics, and miniature footprints for size-constrained designs.

In terms of its working principles, the PEMH9315 has two operational modes that make it suitable for a wide range of applications. These are the ‘gain-control’ mode and the ‘attenuation-control’ mode. In the gain-control mode, the device amplifies the input signal and provides a closed-loop gain of typically 1.3dB. In the attenuation-control mode, the device attenuates the input signal by typically 0.5dB.

The device is powered intrinsically and so it will not require an external power supply. The device is also highly efficient, with a typical power dissipation of less than 2.5mW. This makes it more suitable for low-power applications.

The PEMH9315 is a great option for many types of RF applications due to its low noise characteristics, wide frequency range, small size, and low power consumption. It is one of the most popular choices for many low-noise amplifier applications, and it is a great choice for design engineers.

The specific data is subject to PDF, and the above content is for reference

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