PHB20N06T,118 Discrete Semiconductor Products

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The PHB20N06T,118 is a power metal oxide semiconductor (MOSFET) transistor manufactured by NXP Semiconductors. It is designed for use in power applications, such as motor control and power electronics. The transistor is a single N-channel switch with a logic-level gate and is capable of handling high currents and a wide range of voltages.

MOSFETs are similar to other transistors in how they operate. A small voltage applied to the gate sets up an electric field that attracts electrons and opens a channel between the source and drain. When the gate voltage is removed, the channel closes and no current can flow. This makes them ideal for applications where fast switching is required, as well as for applications where very low power is required.

The PHB20N06T,118 is designed to switch between high and low voltages with an on-resistance of only 20 milliohms. It has a maximum drain-source voltage of 30V and a maximum gate-source voltage of 20V. It can handle currents up to 120A and can operate at temperatures up to 175°C. It is a surface-mount device and measures only 8.3 mm by 8.3 mm.

The transistor is useful in high-voltage, high-current applications, such as motor control, power conversion, and power supplies. It is especially well-suited to applications that require fast switching, as it can switch from off to on in less than 100 nanoseconds. The low on-resistance and wide voltage and temperature range also make it well-suited for high-efficiency power conversion applications.

The PHB20N06T,118 is a versatile transistor that is capable of operating in a wide range of applications with few design constraints. It is an excellent choice for applications requiring fast, low-power switching, high current handling and high efficiency. It is also very reliable, making it an ideal choice for power supply and motor control applications.

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