PHB29N08T,118 Discrete Semiconductor Products

The PHB29N08T,118 is a MOSFET consisting of a single metal oxide semiconductor field-effect transistor (MOSFET). It is a type of transistor that acts as a voltage-controlled switch.

A metal oxide semiconductor field-effect transistor (MOSFET) is an electronic device which uses a solid-state gate on a semiconductor component. It is a ‘field effect’ type of transistor, meaning that it works by controlling the electric field in an attached source or drain electrode. This electric field then controls the current flow through the transistor.

The PHB29N08T,118 is a power MOSFET, meaning it has the capability to handle large amounts of power. It is capable of switching up to 56V and can handle up to 80A of continuous current. It has an incredibly low on-resistance of 36mΩ, meaning it can switch fast and with low losses. It also features a gate-source breakdown voltage of ±20V to keep the gate-source voltage within safe limits.

The PHB29N08T,118 is commonly used in motor control, inverter and DC-DC converter designs. It is also used in applications such as power management in equipment requiring high-speed switching, for example in solar inverters, DC-DC converters, mobile device chargers, and automotive engine control systems. It can also be used in switching the main power lines in computing systems, such as atx power supplies, gaming consoles, and servers.

The working principle of the PHB29N08T,118 is fairly straightforward. The MOSFET is seen as an insulated gate, controlling the flow of current through it when voltage is applied to the gate. When the voltage is greater than a certain threshold, the MOSFET will open, allowing a current to flow through the device. Conversely, when the voltage is less than the threshold, the MOSFET will remain closed, keeping the current from flowing through it. This action is controlled by the gate-source voltage.

In summary, the PHB29N08T,118 is a single MOSFET that is used in motor control, inverter and DC-DC converter applications. It has an incredibly low on-resistance and a maximum gate-source breakdown voltage of ±20V. It works by controlling the electric field in an attached source or drain electrode, opening or closing depending on the applied gate-source voltage.