PHB21N06LT,118 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-4762-2-ND |
Manufacturer Part#: |
PHB21N06LT,118 |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V 19A D2PAK |
More Detail: | N-Channel 55V 19A (Tc) 56W (Tc) Surface Mount D2PA... |
DataSheet: | PHB21N06LT,118 Datasheet/PDF |
Quantity: | 800 |
800 +: | $ 0.25181 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 9.4nC @ 5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PHB21N06LT,118 is a type of Field Effect Transistor (FET) that uses either n-channel or p-channel enhancement mode MOSFET technology. This particular FET is a single, 60V, p-channel MOSFET with an 80mΩ on-resistance rating when the gate voltage is 4.5V.
Field Effect Transistors (FETs) operate by controlling the flow of electrons from the source to the gate of the transistor. The electrons are passed from the source to the gate, creating a current flow when the gate voltage meets or exceeds the threshold voltage. The voltage required to create this current is called the threshold voltage. In order for current to flow through the FET, the gate voltage must meet or exceed the threshold voltage. When this happens, the electrons are allowed to pass through the transistor, creating the current flow.
FETs come in a variety of types that use either n-channel or p-channel technology. N-channel FETs are made up of a source and a drain, which are connected to create a closed circuit. N-channel FETs work by controlling the flow of electrons from the source to the gate. P-channel FETs are made up of a source and a gate, which are connected to create a closed circuit. P-channel FETs work by controlling the flow of electrons from the gate to the drain.
The PHB21N06LT,118 is a single device that uses the p-channel MOSFET technology. It consists of a source and a drain that are connected to form a closed circuit. When the gate voltage meets or exceeds the threshold voltage, then the electrons can flow through the FET, creating a current. This FET is rated for 60V, with an on-resistance rating of 80mΩ at a gate voltage of 4.5V. This makes it ideal for a variety of applications, such as switching circuits, power supplies, and audio amplifiers.
One of the main advantages of FETs is that they can be used in a wide variety of applications, including high-frequency switching and amplifying. FETs are also relatively easy to use and do not require a lot of power to operate. They are also less expensive than other types of transistors, making them a popular choice for a variety of purposes. Additionally, FETs have a very high input impedance and a low output impedance, making them ideal for applications where high input and low output impedances are needed.
The PHB21N06LT,118 is a great example of a single, high-quality MOSFET with a wide range of applications. This FET is rated for 60V and has an on-resistance rating of 80mΩ at a gate voltage of 4.5V. This makes it an ideal choice for a variety of applications, from high-frequency switching to audio amplifiers. With its low power requirements and low cost, this FET is an excellent choice for a variety of different projects.
The specific data is subject to PDF, and the above content is for reference
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