PHB222NQ04LT,118 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors are an essential part of modern electronic circuits, used to control currents and voltages in order to process and transfer signals or energy. Field-effect transistors (FETs) are of particular importance in solid-state electronics, and metal-oxide-semiconductor field-effect transistors (MOSFETs) are one of its essential components. The PHB222NQ04LT,118 is a single MOSFET offering high power efficiency, speed and voltage breakdown. This article will explore its application field and working principle.

Application Field

The PHB222NQ04LT,118 is a device optimized for drain currents of up to 118 A under certain conditions. It is especially suited for use in static switching and PWM in motor control applications such as electric fans, blowers and pumps, as well as other applications where high load current and high drain voltage capability, with low gate-source threshold and low on-resistance, are required.

This device has a breakdown voltage at 1 V, which makes it a suitable choice for switching applications with medium and higher loads. Its simple design, low drain-source capacitance, and fast switching time contribute to its performance and make it reliable in dynamic switching and PWM applications. Furthermore, its 1 V slope, built-in gate-to-drain ESD protection and low on-resistance capability deserve special mention.

In addition, its 94% power efficiency means that there is a substantial reduction in the amount of heat that is generated during operation. This device is also quite small; about the size of a dime, which makes it easy to integrate into virtually any device.

Working Principle

The working principle of the PHB222NQ04LT,118 is based on the same principles as other MOSFET transistors. Operation begins when a voltage difference is created across the drain and source, creating a voltage across the gate-source junction. This enables electrons to be “pushed” from the source to the drain. As the “push” increases in strength, the conductivity of the device increases and a current is allowed to flow.

The device is ideal for applications requiring high current (drain) capacity with an appropriate voltage (gate) signal. The PHB222NQ04LT,118 features a low gate-source threshold voltage and very low on-resistance, which enables it to switch faster and more efficiently than other designs. The device also features built-in ESD protection as an additional safeguard against possible damage.

The PHB222NQ04LT,118 is an attractive solution for applications, which require high current capacity, fast switching, power efficiency, and reliable ESD protection. Its small size and flexible design add to its appeal.

The specific data is subject to PDF, and the above content is for reference