
Allicdata Part #: | 1727-7521-2-ND |
Manufacturer Part#: |
PMCM650CUNEZ |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | PMCM650CUNE NAX000 NONE |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Drain 556... |
DataSheet: | ![]() |
Quantity: | 1000 |
4500 +: | $ 0.16148 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Common Drain |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 556mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-XFBGA, WLCSP |
Supplier Device Package: | 6-WLCSP (1.48x0.98) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PMCM650CUNEZ is state-of-the-art technology in an integrated circuit specifically designed for the application field of transistor arrays and other related components. It uses insulated gate field effect transistors (IGFETs) to form the arrays allowing for versatile designs in applied electronics. It is a MOSFET which means that its effective gate-control over saturation current and drain-source current makes it more efficient than other array technologies such as JFETs. This makes it ideal for applications such as power supplies, motor control stages, switches, and more.
The PMCM650CUNEZ is ideal for high power systems, motor control and other network circuits. It has a low blow-up rate with high stability, allowing for use in wide temperature ranges and its minimal voltage drop gives it high efficiency and low power consumption. The unit also has a low rise time which makes it a great choice for power switching applications.
The PMCM650CUNEZ also features a fast turn-off time, making it suitable for circuits with high switching frequencies. The device has an input capacitance that is suited for smaller signal applications, and a low threshold voltage which allows for better current sensing accuracy. Additionally, coil and transformer selection can be easily optimized because it has a control terminal that responds quickly to the input signal.
The main component of the PMCM650CUNEZ is the Field-Effect Transistor (FET). It consists of a source, gate, and drain. The transistor acts as a switch when an electric voltage is applied to the gate which then causes an electric current to flow between the source and drain. The FET controls the amount of current flow based on the magnitude of the input signal.
Another component of the PMCM650CUNEZ is the integrated gate protection device (IGPD). The IGPD serves as an interface between the gate and drain region of the FET. This ensures that the gate voltage remains protected from the drain current. This prevents excessive current from being drawn in a low resistance load by the gate voltage and also prevents overheating due to high current flows.
The PMCM650CUNEZ also has a built-in high-frequency compensation network (HFCN). This network lowers the total gate voltage in high frequency applications. This allows for better noise immunity and lower input capacitance for faster response time in high frequency circuits.
The PMCM650CUNEZ is an excellent choice for applications that require high power control with accurate performance and reliable operation. The compact size of the device and its ability to integrate a wide range of components into one package make it a great device for array applications. The high voltage operation and low switching frequency give it an edge over other components, making it ideal for many applications.
The specific data is subject to PDF, and the above content is for reference
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