PMCM4402UPEZ Allicdata Electronics
Allicdata Part #:

1727-7625-2-ND

Manufacturer Part#:

PMCM4402UPEZ

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET P-CHANNEL 20V 4WLCSP
More Detail: P-Channel 20V 400mW Surface Mount 4-WLCSP (2x2)
DataSheet: PMCM4402UPEZ datasheetPMCM4402UPEZ Datasheet/PDF
Quantity: 9000
9000 +: $ 0.08007
Stock 9000Can Ship Immediately
$ 0.09
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: 4-XFBGA, WLCSP
Supplier Device Package: 4-WLCSP (2x2)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 400mW
FET Feature: --
Vgs (Max): --
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: --
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PMCM4402UPEZ is a unique field-effect transistor (FET) device, commonly found in power management applications. This FET device, which has been developed by Power Semiconductor, is based on gallium arsenide technology, and utilizes the New Vertical Structure (NVS) semiconductor fabricating technology. This device, which is equipped with a maximum voltage rating of 12V, can operate either in depletion mode or enhancement mode.

In power management applications, the PMCM4402UPEZ is used as a switching device, providing very low on-resistance and low input capacitance. This makes the device an ideal choice for applications such as switching DC to DC converters and AC/DC voltage regulation. The device is also used in power supplies, LED lighting ballasts, and inverters.

The working principle of the PMCM4402UPEZ is based on the passage of current through a channel formed by the electrical field, between the source and the drain terminals. This field is created by applying a positive gate voltage, which tends to open the channel and thus allows the current to flow. The device operates in a \'channel-on\' state, in which the current flows from source to drain, till the gate voltage is increased or decreased beyond the threshold. In such a case, the device will be in a \'channel-off\' state, in which no current flows across the device.

The PMCM4402UPEZ is a bi-directional device, and can switch both AC and DC voltages and currents. The device has a breakdown voltage of 12V and an operating voltage range of 3 V to 6 V. It also features low leakage current, as well as a high switching capacity. The device is also equipped with a wide temperature range, making it suitable for operations in harsh environment. It is also equipped with a short channel protection circuit, which helps in preventing short circuits on the channel.

The PMCM4402UPEZ is suitable for switching applications in battery-powered systems, and particularly for those in which low operating current is required. This makes the device an ideal choice for mobile/portable/handheld devices such as cell phones, PDAs, digital cameras, etc. The device is also suitable for use in energy management systems such as inverters and switching DC voltages.

Overall, the PMCM4402UPEZ is a versatile and reliable FET device, suitable for a wide range of power management applications. This device, which is designed using advanced gallium arsenide technology, offers low on-resistance, high switching capacity and low leakage current. The device is most suitable for use in portable/handheld/battery-operated applications, and is also suitable for use in energy management systems.

The specific data is subject to PDF, and the above content is for reference

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