Allicdata Part #: | PMCM650VNE/S500Z-ND |
Manufacturer Part#: |
PMCM650VNE/S500Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 12V 8.4A 6WLCSP |
More Detail: | N-Channel 12V 8.4A (Ta) 12.5W (Tc) Surface Mount 6... |
DataSheet: | PMCM650VNE/S500Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 15.4nC @ 4.5V |
Package / Case: | 6-XFBGA, WLCSP |
Supplier Device Package: | 6-WLCSP (1.48x.98) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 12.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 6V |
Vgs (Max): | ±8V |
Series: | TrenchMOS™ |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8.4A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PMCM650VNE/S500Z, also referred to as a single-level MOSFET, is a power transistor designed for a wide range of applications. This device is capable of delivering high current, voltage and power complexity with high efficiency benefits. It is composed of a multi-layered MOSFET structure that uses thin gate oxide for high performance.
The PMCM650VNE/S500Z has a wide range of application fields due to its high-density integration and simple design. It is widely used in consumer electronics such as power management, audio amplifiers, battery-based systems (portable speakers) and automotive applications. It is also used in industrial applications such as telecom circuits, motor drives and high-voltage switching. Due to its high power output, the PMCM650VNE/S500Z is often used in power converters and high-power systems.
The working principle behind the PMCM650VNE/S500Z is based on a metal-oxide-semiconductor concept where a gate is used to control the flow of current between the drain and the source of the transistor. In the PMCM650VNE/S500Z, a thin gate oxide layer is used to provide enhanced control of the current flow from the source to the drain. The voltage applied to the gate determines whether the PMCM650VNE/S500Z is in either the saturation (on-state) or the cut-off (off-state). When the gate voltage rises above a certain level, the channel of the MOSFET is opened and current begins to flow from the source to the drain. As the voltage on the gate increases, the amount of current that can flow through the MOSFET increases until the device reaches its maximum current.
The PMCM650VNE/S500Z is highly scalable and offers a wide range of current, voltage and power capabilities. Due to its improved layout and thermal design, this device is capable of supporting high power outputs as well as high voltage operation. The PMCM650VNE/S500Z offers ultra-low on-state resistance for improved efficiency and switching performance.
The PMCM650VNE/S500Z is a highly integrated power transistor that provides a comprehensive solution for a variety of applications. With its ability to handle high current and power, the PMCM650VNE/S500Z is suitable for a variety of applications such as power converters, telecom circuits, audio amplifiers, battery based systems, motor drives and high voltage switching.
The specific data is subject to PDF, and the above content is for reference
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