Allicdata Part #: | 1727-2688-2-ND |
Manufacturer Part#: |
PMCM6501VNEZ |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 12V 6WLCSP |
More Detail: | N-Channel 12V 7.3A (Ta) 556mW (Ta), 12.5W (Tc) Sur... |
DataSheet: | PMCM6501VNEZ Datasheet/PDF |
Quantity: | 1000 |
4500 +: | $ 0.16148 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | 6-XFBGA, WLCSP |
Supplier Device Package: | 6-WLCSP (1.48x.98) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 556mW (Ta), 12.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 920pF @ 6V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 7.3A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PMCM6501VNEZ is a high-performance N-channel enhancement-mode Field Effect Transistor (FET). It is designed for use in a variety of applications, including precision amplification, switching, and current sensing. Its small size and excellent performance make it the ideal choice for applications where space or power dissipation are a concern.
The PMCM6501VNEZ uses a depletion-mode transduction structure to provide low-noise performance and high-speed switching. Its N-channel MOSFET topology provides excellent performance across a wide range of frequencies and voltage levels. The device also offers a wide operating region of -55°C to +150°C and is rated to withstand peak voltage levels up to +50V. The PMCM6501VNEZ is also a highly reliable device, with a projected life expectancy of more than two million cycles.
The PMCM6501VNEZ operates by using a gate-source voltage (VGS) to control the flow of current from the source to the drain. When the VGS is increased, the drain-source current (IDS) increases as well. This type of transistor is commonly used for signal switching, due to its fast switching speed and low on-resistance. In addition, the device also has a low threshold voltage (VTSS) of 1.5 V, which allows the transistor to be used in low-voltage applications.
The device also features an internal drain-source breakdown voltage, which ensures that the device is protected from overvoltage damage. The device\'s breakdown voltage is adjustable, which allows the user to select the most suitable operating voltage for the particular application. The PMCM6501VNEZ is also able to provide high-speed switching, with a maximum operating frequency of 1.2 GHz.
The PMCM6501VNEZ is an ideal choice for precision amplification and current sensing applications, due to its excellent performance across a wide range of frequencies. Its small size and power consumption also make it well-suited for use in portable or low-power applications. Furthermore, its high-speed switching and low-noise performance make it suitable for high-speed data transfer applications. The device can be used in a variety of applications, including medical, industrial, and automotive devices.
The specific data is subject to PDF, and the above content is for reference
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