PMCM6501UNEZ Allicdata Electronics
Allicdata Part #:

1727-7626-2-ND

Manufacturer Part#:

PMCM6501UNEZ

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CHANNEL 20V 6WLCSP
More Detail: N-Channel 20V 400mW Surface Mount 6-WLCSP (1.48x....
DataSheet: PMCM6501UNEZ datasheetPMCM6501UNEZ Datasheet/PDF
Quantity: 9000
4500 +: $ 0.16148
Stock 9000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: 6-XFBGA, WLCSP
Supplier Device Package: 6-WLCSP (1.48x.98)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 400mW
FET Feature: --
Vgs (Max): --
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: --
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PMCM6501UNEZ is a high performance, high voltage vertical MOSFET with integrated active gate protection and extended creepage distance. It is designed to be used in applications such as motor control, solenoid control, and regulated gate-drive circuits. This device features a voltage rating of 65V and a peak current rating of 24A. Its applications range from consumer electronics, automotive, industrial and even medical.

Field-Effect Transistors, commonly referred to as FETs, are solid-state semiconductor devices. They are unipolar devices, meaning they use one kind of charge carrier; either electrons or holes. FETs are voltage controlled, and are classified as unipolar devices, which means that when voltage is applied to the channel, either electrons or holes will move through this channel, depending on the type of FET.

The PMCM6501UNEZ is a single MOSFET, or a Metal-Oxide Semiconductor Field-Effect Transistor. A MOSFET is a voltage-controlled field-effect transistor (FET). There are three terminals of the device. The first is the gate terminal, which is used to control the current flow in the device. Applying a voltage to the Gate gets the charge carriers moving from the source to the drain. The other two terminals, the Source and the Drain, allow connection of an external circuit for controlling the current.

The PMCM6501UNEZ features an integrated active gate protection and extended creepage distance. It can be used for a wide variety of applications, such as motor and solenoid control circuits, regulated gate-drive circuits, and more. Its high voltage rating of 65V and peak current rating of 24A make it suitable for many applications.

The working principle of the PMCM6501UNEZ is based on the MOSFET, which utilizes a voltage applied to the Gate terminal to control the flow of current. When the voltage at the Gate is below the threshold voltage of the MOSFET, no current is allowed to pass through the channel, thus no current flows in the circuit. When the voltage exceeds the threshold voltage of the MOSFET, current is allowed to pass through the channel, thus allowing current to flow in the circuit.

Overall, the PMCM6501UNEZ is a high performance, high voltage vertical MOSFET designed for a wide variety of applications. Its peak current rating of 24A and its integrated active gate protection provide a reliable solution for many applications. With its extended creepage distance, it is suitable for use in a variety of environments. Its working principle is based on the MOSFET, controlled by a voltage applied to the Gate terminal.

The specific data is subject to PDF, and the above content is for reference

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