Allicdata Part #: | 1727-2274-2-ND |
Manufacturer Part#: |
PMCM440VNEZ |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 12V 4WLCSP |
More Detail: | N-Channel 12V 3.9A (Ta) 400mW (Ta), 12.5W (Tc) Sur... |
DataSheet: | PMCM440VNEZ Datasheet/PDF |
Quantity: | 1000 |
9000 +: | $ 0.06380 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | 4-XFBGA, WLCSP |
Supplier Device Package: | 4-WLCSP (0.78x0.78) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400mW (Ta), 12.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 6V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 67 mOhm @ 3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.9A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMCM440VNEZ transistors are semiconductor devices primarily used in electronic circuits to amplify, switch, or otherwise modify the flow of electric current. PMCM440VNEZ transistors are classified as field effect transistors (FETs) and can be divided into two categories: single-gate transistors, also known as metal-oxide-semiconductor field-effect transistors (MOSFETs), and multi-gate transistors, commonly referred to as junction field-effect transistors (JFETs).
The PMCM440VNEZ is a single-gate MOSFET transistor and is widely used in a variety of applications. It is often used in applications that require high levels of power efficiency, such as DC-DC regulator circuits and pulse width modulation circuits. The PMCM440VNEZ is also often used as an on/off switch in defect sensitive applications such as circuit breakers and switch signal wiring. In addition, the PMCM440VNEZ can be used in audio signal processing and in a variety of alternative electronic circuit designs.
The PMCM440VNEZ single-gate MOSFET transistor is designed to reduce power consumption while providing a high degree of functionality. The device is capable of controlling large amounts of current while operating at low voltage. This makes it ideal for use in low-voltage applications. Additionally, the PMCM440VNEZ\'s low on-state resistance offers excellent power efficiency, even in low-voltage applications.
The PMCM440VNEZ is constructed with a gate terminal, a source terminal, and a drain terminal. The gate terminal is used to control the voltage between the source and drain terminals. The source terminal is connected to the positive power supply, while the drain terminal is connected to the negative power supply. By applying the correct voltage to the gate terminal, the current flow between the source and drain terminals can be controlled. The amount of current that can be passed between the source and drain terminals is determined by the design of the device, but is usually limited by the total input voltage.
The PMCM440VNEZ is a highly efficient device, capable of providing high-power output with minimal power consumption. The device is also capable of improving signal integrity and efficiency in a wide range of circuits, making it an ideal choice for a variety of applications. Additionally, the PMCM440VNEZ is relatively low cost, making it an affordable solution for many applications.
In conclusion, the PMCM440VNEZ single-gate MOSFET transistor is a versatile and efficient device, capable of providing high-quality performance in a wide range of applications. The device is highly efficient, able to reduce power consumption while providing a high degree of functionality. Additionally, the PMCM440VNEZ is relatively low cost, making it an affordable solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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