PMCM650VNEZ

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PMCM650VNEZ is a high performance enhancement mode Vertical N-Channel MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). It is designed for use in low voltage applications such as power management, motor control, and signal processing. The device is capable of operating at frequencies up to 10GHz, making it ideal for transceiver and radar applications. Additionally, its integrated fast recovery diode (FRD) enables it to provide very low on-resistance and low switch-on time, making it an attractive choice for high speed switching applications.

The PMCM650VNEZ is a rugged device, capable of handling high currents and large voltage swings. It is available in a variety of packages, allowing designers to select the best type for their application. This includes small leaded packages such as SC70-5, SOT-23-5, and SO-8, as well as larger packages such as PDIP-8, SO-14, and SO-16.

The PMCM650VNEZ features an integrated voltage protection diode, which provides overvoltage protection against ESD and reverse voltage situations. The device is rated for a maximum drain-source voltage of 55V and a maximum drain-source current of 9A. Additionally, the device can handle transients up to 200V.

The working principle of the PMCM650VNEZ is based on the \'Voltage Limit MOSFET\' structure. The device is designed with a negative gate-source voltage limit (+Vgs_lim) that limits the maximum drain current (Id_max) when the gate-source voltage exceeds its limit value. This eliminates the need for current limiting resistors in applications where the drain current must be limited.

The PMCM650VNEZ is well suited for a variety of power management applications such as lighting, motor control, and signal processing. In these applications, it can be used to control voltage and current, enabling products to operate more efficiently and reliably. Additionally, its integrated voltage protection diode ensures that the device remains safe in the event of large voltage swings, such as ESD. The device is also suitable for high speed switching applications, as its fast recovery diode allows it to provide very low on-resistance and low switch-on times.

In summary, the PMCM650VNEZ is a high performance enhancement mode Vertical N-Channel MOSFET designed for use in low voltage applications. It is capable of operating at frequencies up to 10GHz and can handle large current and voltage swings. It is available in a variety of packages, has an integrated voltage protection diode, and its fast recovery diode enables it to provide very low on-resistance and low switch-on time. These qualities make the PMCM650VNEZ an excellent choice for a wide range of power management and signal processing applications.

The specific data is subject to PDF, and the above content is for reference