PMGD175XNEX

The PMGD175XNEX is a field-effect transistor array specifically designed for use in high-power, high-voltage switch-mode power supply applications. This specialized FET array offers improved performance, comprehensive protection features, and an extensive temperature range. It is the ideal choice for a wide range of applications, from high-performance motor controllers, welders, and hot-gas ignitors to computer peripherals and other switch-mode power supplies.

The PMGD175XNEX features an array of sixteen power MOSFETs in a single-package. It is especially useful when several channels need to be switched in parallel to provide higher current levels. This feature reduces component count and simplifies the design of the power supply circuit.

The PMGD175XNEX uses trench technology to significantly reduce Miller Plateau voltage. It also uses the Direct-SOAR transistor to offer extremely low QG and QOSS characteristics. This leads to better performance, improved efficiency, and better thermal management capabilities.

In terms of performance, the PMGD175XNEX offers a maximum RDSON of 11.4Ω for 1200 VDC, a maximum DC current of 380 A and a maximum on-state gate charge of 6.00 nC. It is rated for a maximum junction temperature of 180°C and a maximum drain-source voltage of 1200 VDC.

The PMGD175XNEX is also well-suited for a variety of applications. It is suitable for use in motor controllers, welders, hot-gas ignitors, computer peripherals and other switch-mode power supplies. It features an integrated gate-source dynamic clamping structure to protect against voltage spikes, ensuring safe operation at high voltages.

The PMGD175XNEX\'s working principle is based on the field effect transistor (FET) array. It consists of multiple FETs connected in series or parallel and driven by an integrated gate driver to switch a given load. The FETs have a threshold voltage below which the gate current is minimized and the MOSFETs turn off, effectively shutting off the circuit. Conversely, when the gate voltage exceeds the threshold voltage, the gate current is maximized, allowing the gate to pass a significant current, thus turning the circuit on. The FET array is usually placed between the load and the power source, and when a voltage is applied to the gate, the FET can be turned on or off to switch the load. This type of circuit is widely used for high-power, high-voltage switch-mode power supply applications.

In conclusion, the PMGD175XNEX is a specialized FET array designed for high-power, high-voltage switch-mode power supply applications. It offers improved performance, comprehensive protection features, and an extensive temperature range. By utilizing Direct-SOAR technology, it offers lower QG and QOSS characteristics and better thermal management capabilities. It is suitable for use in a wide range of applications, from high-performance motor controllers and welders to computer peripherals and other switch-mode power supplies.