Allicdata Part #: | 1727-1354-2-ND |
Manufacturer Part#: |
PMGD290UCEAX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N/P-CH 20V 6TSSOP |
More Detail: | Mosfet Array N and P-Channel 20V 725mA, 500mA 280m... |
DataSheet: | PMGD290UCEAX Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 725mA, 500mA |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.68nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 83pF @ 10V |
Power - Max: | 280mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | 6-TSSOP |
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The PMGD290UCEAX is a three-terminal array of monolithic field-effect transistors (FETs) mounted in a surface-mount package. It is a cost-effective way to increase the number of channels you can use for driving and controlling circuits.
The PMGD290UCEAX operates in an open-drain arrangement. This means that each terminal can be configured independently, allowing the device to be used in a variety of applications, such as multiplexers, drivers, amplifiers, and inverters. With a maximum VGS rating of 20V and a maximum drain-source voltage rating of 100V, this device can handle a wide range of voltage levels. This makes it ideal for powering or controlling load circuits with higher voltages or longer switching cycles.
The PMGD290UCEAX is capable of operating at a maximum frequency of 1GHz, making it suitable for applications that require fast response times such as data communications or video processing. The device can also be used in noise filtering circuits to reduce noise levels in the output signal.
The PMGD290UCEAX has a low on-state resistance and has a low leakage current. This makes it suitable for power management applications, including mobile equipment, machine/industrial controllers, lighting control, as well as audio equipment. The low capacitance of the device means that it can be used in high-speed switching and clock applications.
The working principle of the PMGD290UCEAX is based on a MOSFET (metal oxide semiconductor field-effect transistor), which consists of a gate, source, and drain that form a type of switch. The gate is insulated by a thin oxide layer that can be modulated by a voltage or control signal. When a positive voltage is applied to the gate, an electric field is created that turns on the switch, allowing current to flow from source to drain and vice versa. The voltage required to turn on the switch is called the threshold voltage, and the amount of current flowing through the device is controlled by the drain-source voltage.
The current through the device is proportional to the applied gate-source voltage and drain-source voltage, and is limited by the device’s maximum current handling capability and its power dissipation rate. The PMGD290UCEAX is also equipped with built-in protection against over-voltage, over-current, and reverse-bias conditions, allowing it to be used in safety-critical applications.
In summary, the PMGD290UCEAX is an ideal solution for applications that require multiple channels, fast response times, and excellent protection against prone conditions. Its low on-state resistance and capacitance makes it ideal for high-speed switching and power management applications, while its built-in protection features makes it suitable for safety-critical applications.
The specific data is subject to PDF, and the above content is for reference
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