PMGD780SN,115 Datasheet/PDFPMGD780SN,115 Arrays
The PMGD780SN,115 is an integrated circuit array made up of MOSFETs with a total of nine breakdown voltage sources. The high breakdown voltage of the device is due to the use of 16 separate MOSFETs arranged in an array with a total gate-source overvoltage of 855V. The PMGD780SN,115 is manufactured by Diodes Inc., a US-based semiconductor company.
The PMGD780SN,115 has several applications. It can be used in designing DC/DC converters, in designing high-power H-bridge circuits, and in driving high power loads such as motors and lamps. Additionally, the device can be used to protect circuits from adverse electrical overstress (EOS) conditions, such as those caused by voltage spikes, lightning, or other extreme electrical events.
Working Principle of PMGD780SN,115 Array
The operation of the PMGD780SN,115 array is based on its MOSFET technology. Each transistor in the array operates as an individual device and acts as an independent regulator. In other words, each of the sixteen MOSFETs in the PMGD780SN,115 can be thought of as a separate, individual regulator. Because each transistor operates independently, the array has a greater ability to efficiently regulate power than if it were just one large transistor.
The operating principle of the PMGD780SN,115 array is based on the flow of electrons in a channel of silicon. When the gate of the transistor is at a low voltage, electrons from the channel pass through and turn the transistor on. The current conducting channel then increases as the voltage of the gate is increased. As the voltage of the gate continues to increase, the current conducting channel reaches its maximum and the transistor turns off. This principle allows the PMGD780SN,115 array to regulate voltage and current.
Advantages of the PMGD780SN,115 Array
The PMGD780SN,115 array offers several advantages. For example, because the array is composed of sixteen individual transistors, it is smaller and more efficient than a single large transistor. Additionally, the device is more reliable and has a wide range of operating temperatures. The PMGD780SN,115 array also has an extremely low on-state resistance, which allows it to provide efficient power regulation without dissipating too much energy.
The PMGD780SN,115 array also offers several advantages over conventional H-bridge circuits. For example, the device is faster, simpler, and more reliable. Additionally, the device provides a better control framework for powering large loads. Finally, the PMGD780SN,115 array is much lighter and more flexible compared to conventional H-bridge circuits, which enables it to be used in a wide range of applications.
Conclusion
The PMGD780SN,115 array is a versatile integrated circuit composed of sixteen MOSFETs arranged in an array. The device offers a number of advantages, including its small size, high reliability, and low on-state resistance. It is also more efficient and reliable than conventional H-bridge circuits, and offers a simpler, more reliable control framework for powering large loads. As such, the PMGD780SN,115 array is an ideal choice for designers looking for an efficient, reliable way to regulate power.