PMGD280UN,115 Allicdata Electronics
Allicdata Part #:

1727-3125-2-ND

Manufacturer Part#:

PMGD280UN,115

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2N-CH 20V 0.87A 6TSSOP
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 870mA 400mW Su...
DataSheet: PMGD280UN,115 datasheetPMGD280UN,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.07173
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 870mA
Rds On (Max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V
Power - Max: 400mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Description

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PMGD280UN,115 Application Field and Working Principle

The PMGD280UN,115 is an integrated circuit (IC) that is used as an array or in a system to power a variety of high-speed, medium-power, switching applications. This IC is an array of several metal-oxide-semiconductor field-effect transistors (MOSFETs) in which the source and drain terminals are identified as "input" and "output" terminals respectively and are both connected to the power supply voltage. The purpose of the MOSFET array is to switch high voltage/current and provide reliable, efficient switch control.

In the MOSFET array, each transistor is connected in parallel, and the gate and substrate of each transistor are connected to their respective inputs and outputs, respectively. This allows each transistor to operate independently in both the small-signal and high-signal regimes. The MOSFET array has several advantages, such as small size and low power dissipation. This makes them suitable for use in high-frequency switching applications, such as power supply switching, clock and data distribution, and logic control.

The working principle of the PMGD280UN,115 array is based on the principle of imbalance control. When the gate voltage is applied to the transistor array, the VGS voltage of each transistor will be different, and when the transistor is operated, the number of carriers in the channel region of each transistor will be different depending on the VGS voltage applied. This result in different types of current flowing through each transistor, creating an imbalance current in the transistor array, which then results in the switching of the transistors.

The PMGD280UN,115 IC is an ideal solution for the applications in which the TFTs power switch needs to be controlled with high accuracy and low power consumption. Additionally, the array can support higher switching frequency and operate without additional control circuit. Moreover, with the integrated ESD protection circuit, the PMGD280UN,115 IC is also suitable for applications that require overvoltage control.

In conclusion, the PMGD280UN,115 is a versatile integrated circuit that provides efficient and reliable power and switching performance for various medium-power, high-speed switching applications. The MOSFET array is easy to operate and the integrated ESD protection makes it suitable for any application that requires overvoltage protection and high switching frequency.

The specific data is subject to PDF, and the above content is for reference

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