PMGD130UN,115 Allicdata Electronics
Allicdata Part #:

568-10792-2-ND

Manufacturer Part#:

PMGD130UN,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET 2N-CH 20V 1.2A 6TSSOP
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 1.2A 390mW Sur...
DataSheet: PMGD130UN,115 datasheetPMGD130UN,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Rds On (Max) @ Id, Vgs: 145 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Power - Max: 390mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PMGD130UN,115 is a multi-gate field-effect (MOSFET) transistor array that was developed by NXP Semiconductor’s, Inc. It is a complementary-symmetry device, meaning that it has a number of transistors which complement each other in terms of their properties.

The PMGD130UN,115 device is an advanced, low-power circuit solution suited for low-voltage, high-current switching and amplification in applications such as LCD and LED display panels, and digital signal processing. It has an extremely wide range of operating voltages, from 0.9V to 24V, and can support currents as low as 10uA up to a maximum of 12A. This versatility makes it particularly well-suited for power management and other power management functions.

The PMGD130UN,115 contains two N-channel (“n-type”) and two P-channel (“p-type”) MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) and is available in a wide variety of surface-mount plastic packages. The N-channel MOSFETs are designed to draw more current when compared with other complementary FETs, while the P-channel transistors are typically used to increase signal swing and reduce noise. The device is designed to provide a low-power, low-noise and low-interference solution compatible with many circuit types, such as Class D audio amplifiers and portable battery power management.

The basic working principle of the PMGD130UN,115 is that it uses the electrical capacitance between the source and drain of an MOSFET as a switch. The source and drain are independently controlled by a gate voltage; when the gate voltage is increased, the capacitance between the source and drain increases, allowing more current to flow. When the gate voltage is reduced, the capacitance decreases, reducing the current. This switch-like behavior can be used to control the flow of current in a circuit.

The PMGD130UN,115 is a highly versatile device that can be used in a wide range of applications, including power management and signal processing in consumer electronics, industrial controls, telecommunications, and other applications where low-powered, low-noise and interference-free circuits are required. It is compatible with a number of circuit types, such as Class D audio amplifiers, and is capable of providing outstanding performance in a wide range of conditions.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "PMGD" Included word is 11
Part Number Manufacturer Price Quantity Description
PMGD130UN,115 NXP USA Inc 0.0 $ 1000 MOSFET 2N-CH 20V 1.2A 6TS...
PMGD175XN,115 NXP USA Inc 0.0 $ 1000 MOSFET 2N-CH 30V 0.9A 6TS...
PMGD175XNEAX Nexperia USA... 0.0 $ 1000 MOSFET 2 N-CH 30V 900MA S...
PMGD8000LN,115 NXP USA Inc 0.0 $ 1000 MOSFET 2N-CH 30V 0.125A 6...
PMGD400UN,115 NXP USA Inc 0.0 $ 1000 MOSFET 2N-CH 30V 0.71A 6T...
PMGD370XN,115 Nexperia USA... 0.0 $ 1000 MOSFET 2N-CH 30V 0.74A 6T...
PMGD290UCEAX Nexperia USA... -- 1000 MOSFET N/P-CH 20V 6TSSOPM...
PMGD290XN,115 Nexperia USA... 0.08 $ 3000 MOSFET 2N-CH 20V 0.86A 6T...
PMGD280UN,115 Nexperia USA... 0.08 $ 1000 MOSFET 2N-CH 20V 0.87A 6T...
PMGD780SN,115 Nexperia USA... 0.06 $ 1000 MOSFET 2N-CH 60V 0.49A 6T...
PMGD175XNEX Nexperia USA... 0.09 $ 1000 MOSFET 2 N-CH 30V 870MA 6...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics