Allicdata Part #: | 568-10792-2-ND |
Manufacturer Part#: |
PMGD130UN,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET 2N-CH 20V 1.2A 6TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 1.2A 390mW Sur... |
DataSheet: | PMGD130UN,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 1.2A |
Rds On (Max) @ Id, Vgs: | 145 mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 83pF @ 10V |
Power - Max: | 390mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | 6-TSSOP |
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PMGD130UN,115 is a multi-gate field-effect (MOSFET) transistor array that was developed by NXP Semiconductor’s, Inc. It is a complementary-symmetry device, meaning that it has a number of transistors which complement each other in terms of their properties.
The PMGD130UN,115 device is an advanced, low-power circuit solution suited for low-voltage, high-current switching and amplification in applications such as LCD and LED display panels, and digital signal processing. It has an extremely wide range of operating voltages, from 0.9V to 24V, and can support currents as low as 10uA up to a maximum of 12A. This versatility makes it particularly well-suited for power management and other power management functions.
The PMGD130UN,115 contains two N-channel (“n-type”) and two P-channel (“p-type”) MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) and is available in a wide variety of surface-mount plastic packages. The N-channel MOSFETs are designed to draw more current when compared with other complementary FETs, while the P-channel transistors are typically used to increase signal swing and reduce noise. The device is designed to provide a low-power, low-noise and low-interference solution compatible with many circuit types, such as Class D audio amplifiers and portable battery power management.
The basic working principle of the PMGD130UN,115 is that it uses the electrical capacitance between the source and drain of an MOSFET as a switch. The source and drain are independently controlled by a gate voltage; when the gate voltage is increased, the capacitance between the source and drain increases, allowing more current to flow. When the gate voltage is reduced, the capacitance decreases, reducing the current. This switch-like behavior can be used to control the flow of current in a circuit.
The PMGD130UN,115 is a highly versatile device that can be used in a wide range of applications, including power management and signal processing in consumer electronics, industrial controls, telecommunications, and other applications where low-powered, low-noise and interference-free circuits are required. It is compatible with a number of circuit types, such as Class D audio amplifiers, and is capable of providing outstanding performance in a wide range of conditions.
The specific data is subject to PDF, and the above content is for reference
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