Allicdata Part #: | 568-2367-2-ND |
Manufacturer Part#: |
PMGD370XN,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2N-CH 30V 0.74A 6TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 740mA 410mW Su... |
DataSheet: | PMGD370XN,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 740mA |
Rds On (Max) @ Id, Vgs: | 440 mOhm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.65nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 37pF @ 25V |
Power - Max: | 410mW |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | 6-TSSOP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
As an advanced field effect transistor (FET), the PMGD370XN,115 is an ideal choice for many applications. It is a combined array of two N-channel MOSFETs, which are designed to operate efficiently without the need for complex circuitry. In addition to being efficient, PMGD370XN,115 transistors offer excellent performance and reliability.
The PMGD370XN,115 consists of two parallel structures of N-channel MOSFETs. Each MOSFET consists of a source and a drain, with the source being connected to the ground. The drain then connects to the channel between the source and the gate. The channel has an oxide layer that separates it from the silicon substrate. The oxide layer acts as an insulating barrier, which allows a controlled amount of current to flow between the source and the gate.
The PMGD370XN,115 is an ideal choice for power management applications, such as switching circuits and motor control systems. It is also suitable for use in various communication devices, such as digital signal processors. Additionally, it can be used in digital logic and memory devices, as well as automotive and industrial applications. Due to its robust nature, the PMGD370XN,115 is also suited for use in medical device applications.
The working principle behind the PMGD370XN,115 involves the application of an external voltage. This voltage serves as an input signal to the MOSFET array. When this external voltage is applied, it creates an electric field between the source and the gate. This electric field then causes an increased current flow from the source to the gate. This increased current flow allows the transistor to control the amount of current passing through the device.
The PMGD370XN,115 offers many advantages compared to other types of transistors. It is capable of switching large currents without any additional circuitry or thermal considerations. Additionally, it has a high switching speed, making it suitable for many high-speed applications. Its low thermal resistance also makes it a good choice for high-power applications.
Overall, the PMGD370XN,115 is an ideal choice for many applications, including power management, communication systems, digital logic and memory devices, automotive and industrial applications, and medical device applications. Its efficient design and robust construction make it a reliable and cost-effective choice for numerous applications. The PMGD370XN,115 is an ideal solution for its intended applications, offering excellent performance and a reliable switching experience.
The specific data is subject to PDF, and the above content is for reference
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